6-Methylanthracene-2-sulfonic acid

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 6-Methylanthracene-2-sulfonic acid
• 英文别名: 6-methylanthracene-2-sulfonic acid
• 化学式: C₁₅H₁₂O₃S
• 分子量: 272.3
• InChiKey: ULFYCJVTXSMYQS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.2
• 重原子数：
  19
• 可旋转键数：
  1
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.07
• 拓扑面积：
  62.8
• 氢给体数：
  1
• 氢受体数：
  3

文献信息

• Pattern formation methods and photoresist pattern overcoat compositions
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US11003074B2

  公开（公告）日：2021-05-11

  A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

  一种图案形成方法，包括：(a) 提供半导体衬底；(b) 在半导体衬底上形成光刻胶图案，其中光刻胶图案由光刻胶组合物形成，光刻胶组合物包括包含可酸基团的第一种聚合物；以及光酸发生器； (c) 在光刻胶图案上涂覆图案涂层组合物，其中图案涂层组合物包含第二种聚合物和有机溶剂，其中有机溶剂包含一种或多种酯溶剂，其中酯溶剂的式为 R1-C(O)O-R2，其中 R1 为 C3-C6 烷基，R2 为 C5-C10 烷基；(d) 烘烤涂层光刻胶图案；以及 (e) 用漂洗剂漂洗涂层光刻胶图案，以去除第二种聚合物。这些方法特别适用于半导体器件的制造。
• PATTERN FORMATION METHODS AND PHOTORESIST PATTERN OVERCOAT COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20210232047A1

  公开（公告）日：2021-07-29

  A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R 1 —C(O)O—R 2 , wherein R 1 is a C3-C6 alkyl group and R 2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.