1-(3,3-Difluorobutan-2-yl)-2,3,4,5,6-pentafluorobenzene

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1-(3,3-Difluorobutan-2-yl)-2,3,4,5,6-pentafluorobenzene
• 英文别名: 1-(3,3-difluorobutan-2-yl)-2,3,4,5,6-pentafluorobenzene
• 化学式: C₁₀H₇F₇
• 分子量: 260.15
• InChiKey: YFSAXWMFARVQIV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.1
• 重原子数：
  17
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  7

文献信息

• METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD
  申请人：FUJIFILM Corporation

  公开号：US20150118621A1

  公开（公告）日：2015-04-30

  Provided is a method of forming a pattern, including (a) forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising a resin (P) containing a repeating unit (P1) with a cyclic carbonic acid ester structure and any of repeating units (P2) of general formula (P2-1) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to actinic rays or radiation, and (c) developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.
• ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170184973A1

  公开（公告）日：2017-06-29

  An organic treatment liquid for patterning a resist film, in which a metal element concentration of each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn is 3 ppm or less and which can reduce generation of particles, in a negative tone pattern forming method for forming a miniaturized (for example, 30 nm node or less) pattern by particularly using an organic developer, a method of producing the organic treatment liquid for patterning a resist film, a storage container of the organic treatment liquid for patterning a resist film, a pattern forming method using the same, and a method of producing an electronic device can be provided.