申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20140235796A1
公开(公告)日:2014-08-21
The invention provides a composition for forming a resist underlayer film including: as a component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds represented by the following general formula (A-1). There can be provided a composition for forming a resist underlayer film having etching selectivity relative to a conventional organic film and a silicon-containing film and favorable pattern adhesiveness relative to fine pattern even in a complicated patterning process.
R
1A
a1
R
2A
a2
R
3A
a3
Si(OR
0A
)
(4-a1-a2-a3)
(A-1)
本发明提供了一种用于形成抗蚀底层膜的组合物,包括:作为组分(A)的硅含量化合物,所述硅含量化合物是由以下一种或多种硅化合物的水解和/或缩合得到的,所述硅化合物由以下一般式(A-1)表示。可以提供一种用于形成抗蚀底层膜的组合物,其相对于传统有机膜和硅含量膜具有蚀刻选择性,并且相对于细微图案即使在复杂的图案制作过程中也具有良好的图案附着性。 R1Aa1R2Aa2R3Aa3Si(OR0A)(4-a1-a2-a3)(A-1)