2-[2-(4-Butan-2-ylphenoxy)ethoxy]-1,3,5-tris(methoxymethyl)benzene

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-[2-(4-Butan-2-ylphenoxy)ethoxy]-1,3,5-tris(methoxymethyl)benzene
• 英文别名: 2-[2-(4-butan-2-ylphenoxy)ethoxy]-1,3,5-tris(methoxymethyl)benzene
• 化学式: C₂₄H₃₄O₅
• 分子量: 402.5
• InChiKey: IKBQXQDKQSOBJH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.2
• 重原子数：
  29
• 可旋转键数：
  13
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  46.2
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND
  申请人：FUJIFILM Corporation

  公开号：US20160280675A1

  公开（公告）日：2016-09-29

  The actinic ray-sensitive or radiation-sensitive resin composition includes a crosslinking agent having a polarity converting group and an alkali-soluble resin, in which the polarity converting group is a group capable of decomposing by the action of an alkaline aqueous solution to generate a carboxylic acid or sulfonic acid on the side having a crosslinking group.

  感光树脂或辐射敏感树脂组合物包括具有极性转换基团和可溶于碱性树脂的交联剂，其中极性转换基团是一种能够通过碱性水溶液作用分解并在具有交联基团的侧面生成羧酸或磺酸的基团。
• Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound
  申请人：FUJIFILM Corporation

  公开号：US10011576B2

  公开（公告）日：2018-07-03

  The actinic ray-sensitive or radiation-sensitive resin composition includes a crosslinking agent having a polarity converting group and an alkali-soluble resin, in which the polarity converting group is a group capable of decomposing by the action of an alkaline aqueous solution to generate a carboxylic acid or sulfonic acid on the side having a crosslinking group.

  光敏或辐射敏感树脂组合物包括具有极性转换基团的交联剂和碱溶性树脂，其中极性转换基团是能够在碱性水溶液作用下分解的基团，在具有交联基团的一侧生成羧酸或磺酸。
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM Corporation

  公开号：US20140242502A1

  公开（公告）日：2014-08-28

  According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a compound (A) that contains a structure (P) containing at least one phenolic hydroxyl group and a structure (Q) containing at least one phenolic hydroxyl group whose hydrogen atom is replaced by a group (S) with a cyclic structure containing an acid crosslinking group, characterized in that the group (S) with a cyclic structure containing an acid crosslinking group is a group with a polycyclic structure or a group with a cyclic structure containing a hydroxymethyl group and/or an alkoxymethyl group.
• CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANK, METHOD OF FORMING PHOTOMASK AND PATTERN, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150072274A1

  公开（公告）日：2015-03-12

  A chemical amplification resist composition according to the present invention includes (A) a compound including a triarylsulfonium cation having one or more fluorine atoms and capable of generating an acid with a volume of 240 Å 3 or higher by irradiation of active rays or radiation; and (B) a compound including a phenolic hydroxyl group.
• RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
  申请人：FUJIFILM Corporation

  公开号：US20150118623A1

  公开（公告）日：2015-04-30

  A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R 1 represents a hydrogen atom, a methyl group, or a halogen atom; R 2 and R 3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.