3,3,3-Trifluoro-2-(2-hydroxybenzoyl)oxy-2-(trifluoromethyl)propane-1-sulfonic acid

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 3,3,3-Trifluoro-2-(2-hydroxybenzoyl)oxy-2-(trifluoromethyl)propane-1-sulfonic acid
• 英文别名: 3,3,3-trifluoro-2-(2-hydroxybenzoyl)oxy-2-(trifluoromethyl)propane-1-sulfonic acid
• 化学式: C₁₁H₈F₆O₆S
• 分子量: 382.23
• InChiKey: PTASZMYSPCQQSR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  24
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.36
• 拓扑面积：
  109
• 氢给体数：
  2
• 氢受体数：
  12

文献信息

• RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184967A1

  公开（公告）日：2017-06-29

  A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

  提供一种聚合物，其中包含含有特定内酯环的重复单元，并且在融合环内酯的γ-丁内酯骨架上具有烷基基团，以及在内酯结构和聚合物主链之间具有烷基酯取代基团。以该聚合物为基础树脂的抗蚀组合物在DOF边缘和MEF等性能方面得到改善，并且非常有效用于精确微图案化。
• ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20200369605A1

  公开（公告）日：2020-11-26

  An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

  提供一种化学式为（1）的铵盐和包括该铵盐作为PAG的化学增感抗蚀组合物。通过光刻加工时，该抗蚀组合物表现出高灵敏度，最小LWR和改善的CDU，无论其为正像还是负像。
• SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180088464A1

  公开（公告）日：2018-03-29

  On use of a sulfonium salt of specific structure as PAG, acid diffusion is suppressed. A resist composition comprising the sulfonium salt forms a pattern with improved lithography properties including EL, MEF and LWR when processed by lithography.

  使用具有特定结构的磺鎵盐作为PAG时，可以抑制酸扩散。包括EL、MEF和LWR在内的改进的光刻特性的图案可以由含有该磺鎵盐的光阻组成的深紫外光刻胶处理而成。
• RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210141306A1

  公开（公告）日：2021-05-13

  A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W 1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W 2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M + represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

  一种抗蚀组合物，包含：（A）一种树脂，其中包含具有酸敏基团的重复单元，且不含芳香基取代的重复单元；（B）一种通过通式（B-1）表示的光酸发生剂；以及（C）一种溶剂，其中W1表示具有4至12个碳原子且含有杂原子的环状二价碳氢基团；W2表示具有4至14个碳原子且不含杂原子的环状一价碳氢基团；Rf表示由以下通式表示的二价有机基团；M+表示一个离子阳离子。这提供了一种抗蚀组合物和使用该抗蚀组合物的图案化过程，该过程在光刻工艺中特别显示出有利的掩模尺寸依赖性（掩模误差因子：MEF）、线宽粗糙度（LWR）和临界尺寸均匀性（CDU），特别是在使用高能量光源，如ArF准分子激光器光束时。
• CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3343291A1

  公开（公告）日：2018-07-04

  A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

  一种由聚合物和式（A）的锍化合物组成的正抗蚀剂组合物具有很高的分辨率，聚合物可在酸的作用下分解以增加其在碱性显影剂中的溶解度。当光刻法处理抗蚀剂组合物时，可形成具有最小 LER 的图案。