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1-Butan-2-yl-4-(2-cyclohexyl-1-cyclohexyloxyethoxy)benzene

中文名称
——
中文别名
——
英文名称
1-Butan-2-yl-4-(2-cyclohexyl-1-cyclohexyloxyethoxy)benzene
英文别名
1-butan-2-yl-4-(2-cyclohexyl-1-cyclohexyloxyethoxy)benzene
1-Butan-2-yl-4-(2-cyclohexyl-1-cyclohexyloxyethoxy)benzene化学式
CAS
——
化学式
C24H38O2
mdl
——
分子量
358.6
InChiKey
UIVJPBKHKQDROG-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    8.5
  • 重原子数:
    26
  • 可旋转键数:
    8
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.75
  • 拓扑面积:
    18.5
  • 氢给体数:
    0
  • 氢受体数:
    2

文献信息

  • ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION
    申请人:FUJIFILM CORPORATION
    公开号:US20150010855A1
    公开(公告)日:2015-01-08
    There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å 3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device.
    提供一种感光或辐射敏感的组合物,其中包含(α)一种化合物,其由公式(αI)表示,能够产生大小为200Å3或更大的体积的酸,以及(β)一种化合物,能够在受到光辐射或辐射时产生酸,公式(αI)的定义如本文所述。还提供了使用该感光或辐射敏感组合物形成的光阻膜,涂有光阻膜的光阻涂层掩模坯料,包括曝光光阻膜和显影曝光后膜的光阻图案形成方法,通过曝光和显影涂有光阻涂层的掩模坯料获得的光掩模,以及一种电子器件的制造方法,包括光阻图案形成方法和制造电子器件的电子器件制造方法,以及通过该电子器件制造方法制造的电子器件。
  • US20140272692A1
    申请人:——
    公开号:US20140272692A1
    公开(公告)日:2014-09-18
  • ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20150118628A1
    公开(公告)日:2015-04-30
    Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) comprising any of repeating units (A) of general formula (I) below, each of which contains an ionic structural moiety that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid in a side chain of the resin.
  • ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20150293446A1
    公开(公告)日:2015-10-15
    There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E).
  • US9285679B2
    申请人:——
    公开号:US9285679B2
    公开(公告)日:2016-03-15
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