申请人:Rohm and Haas Electronic Materials CMP Holdings, Inc.
公开号:US10875144B2
公开(公告)日:2020-12-29
The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.
本发明提供了CMP抛光金属表面的方法,例如半导体晶片中的含铜或钨的金属表面,该方法包括用CMP抛光垫对基片进行CMP抛光,该CMP抛光垫在抛光层中具有顶部抛光表面,该抛光层是异氰酸酯端聚氨酯预聚物和固化剂组分的反应产物,固化剂组分包括平均分子量为6000至15、000,且每个分子平均有 5 至 7 个羟基,以及一种多官能芳香胺固化剂。在室温下的去离子水中浸泡一周后,抛光层的吸水率为 4 至 8 wt.这些方法可形成共面金属和介电层或氧化层表面,具有低缺陷率和最小的凹陷程度。