(5-Oxo-4,8-dioxatricyclo[4.2.1.03,7]nona-1,3(7),6(9)-trien-2-yl) 2,2-dimethylbutanoate

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚酯
• 英文名称: (5-Oxo-4,8-dioxatricyclo[4.2.1.03,7]nona-1,3(7),6(9)-trien-2-yl) 2,2-dimethylbutanoate
• 英文别名: (5-oxo-4,8-dioxatricyclo[4.2.1.03,7]nona-1,3(7),6(9)-trien-2-yl) 2,2-dimethylbutanoate
• 化学式: C₁₃H₁₂O₅
• 分子量: 248.23
• InChiKey: VHMBJEWFJANFBB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  18
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.38
• 拓扑面积：
  65.7
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20220127225A1

  公开（公告）日：2022-04-28

  An onium salt having formula (1) serving as an acid diffusion inhibitor and a chemically amplified resist composition comprising the acid diffusion inhibitor are provided. When processed by lithography, the resist composition forms a pattern having minimal defects and excellent lithography performance factors such as CDU, LWR and DOF.

  提供一种化学式为(1)的盐类，作为酸扩散抑制剂，并提供一种化学增强型光刻胶组合物，其中包括该酸扩散抑制剂。当通过光刻技术进行加工时，该光刻胶组合物形成的图案具有最小的缺陷和出色的光刻性能因子，如CDU、LWR和DOF。
• MATERIAL FOR FORMING ORGANIC FILM, PATTERNING PROCESS, COMPOUND, AND POLYMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20220214617A1

  公开（公告）日：2022-07-07

  A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); “n” represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, “n”, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film.

  一种用于形成有机薄膜的材料包含(A)通式(1)所示的化合物和/或具有通式(4)所示的重复单元的聚合物，以及(B)有机溶剂。在公式(1)中，AR1、AR2、AR3、AR4、AR5和AR6各代表苯环或萘环；R1代表以下公式(2)中显示的任何基团；“n”表示1或2的整数；W代表具有2-50个碳原子的二价有机基团。在公式(4)中，AR1、AR2、AR3、AR4、AR5、AR6、R1、“n”和W如上所定义；R2和R3各代表氢原子或具有1-20个碳原子的有机基团，并且可选择在分子内彼此结合形成环状有机基团。本发明提供了一种用于形成有机薄膜的材料，以实现高蚀刻抗性和优异的扭曲抗性，而不损害树脂衍生的碳含量；以及适用于形成有机薄膜的化合物和聚合物。
• SHRINK MATERIAL AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3032333B1

  公开（公告）日：2017-05-24
• COMPOUND, POLYMER COMPOUND, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170038683A1

  公开（公告）日：2017-02-09

  The present invention provides a compound shown by the formula (1), wherein R 1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; A represents a single bond or a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms, in which the hydrocarbon group may contain a heteroatom, and a part or all of hydrogen atoms in the hydrocarbon group may be substituted with a group containing a heteroatom; “n” represents 0 or 1, provided that “n” is 0 when A is a single bond; and M + represents a cation. This compound is suitable as a raw material of a polymer compound usable for a base resin of a resist composition that has high resolution and high sensitivity and is excellent in balance of lithography properties such as LWR and CDU.
• SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20190033716A1

  公开（公告）日：2019-01-31

  A polymer comprising recurring units derived from a sulfonium salt of specific structure having a polymerizable group is coated to form a resist film which is amenable to precise micropatterning because of improved LWR, CDU and resolution.