4-Anthracen-1-yl-2-methylbut-2-enoic acid

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: 4-Anthracen-1-yl-2-methylbut-2-enoic acid
• 英文别名: 4-anthracen-1-yl-2-methylbut-2-enoic acid
• 化学式: C₁₉H₁₆O₂
• 分子量: 276.3
• InChiKey: XVFLAGGQEJMWCD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5
• 重原子数：
  21
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.11
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• COATING COMPOSITIONS SUITABLE FOR USE WITH AN OVERCOATED PHOTORESIST
  申请人：Amara John P.

  公开号：US20110003250A1

  公开（公告）日：2011-01-06

  In one aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. In another aspect, organic coating compositions, particularly antireflective coating compositions, are provided that comprise a component comprising a hydroxyl-naphthoic group, such as a 6-hydroxy-2-naphthoic group Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

  在一个方面，提供了有机涂层组合物，特别是抗反射涂层组合物，其包括二烯/二烯亲双反应产物。在另一个方面，提供了有机涂层组合物，特别是抗反射涂层组合物，其包括一个含有羟基-萘甲基团的组分，例如6-羟基-2-萘甲基团。本发明的优选组合物可用于减少曝光辐射从基板反射回覆盖的光刻胶层，并/或作为平坦化、整平或填孔层。
• Porphyrin compositions
  申请人：Litz Erik Kyle

  公开号：US20060152149A1

  公开（公告）日：2006-07-13

  Novel metal porphyrin compositions useful as organic phosphors are provided. The novel compositions are prepared from commercially available porphyrin-containing starting materials. In one instance a novel palladium-containing porphyrin composition having a number average molecular weight of greater than 12,000 grams per mole was prepared from 5,10,15,20-tetrakis(3′,5′-di(hydroxy)phenyl)-21H-23H-porphyrin by reaction first with palladium(II) acetylacetonate, followed by reaction with 2-bromo-2-methylpropionyl bromide, and subsequent group transfer reaction of the alpha-bromo ester groups with 9,9-dioctyl-2-vinylfluorene in the presence of CuBr as a radical initiator. The product polymer exhibited a number average molecular weight of 12,884 grams per mole, a weight average molecular weight of 14,338 grams per mole, and a robust red phosphorescent emission. Porphyrin containing copoylmers comprising structural units derived from 9,9-dioctyl-2-vinylfluorene and 9-anthracenylmethyl methacrylate were prepared in a similar fashion.

  提供用作有机荧光体的新型金属卟啉组合物。这些新型组合物是从商业可获得的含卟啉起始原料制备的。在一个实例中，通过首先与醋酸钯(II)反应，然后与2-溴-2-甲基丙酰溴反应，并在CuBr存在下将α-溴酯基团与9,9-二辛基-2-乙烯基芴进行基团转移反应，制备了一个平均分子量大于12,000克/摩尔的新型含钯卟啉组合物，起始原料为5,10,15,20-四(3′,5′-二(羟基)苯基)-21H-23H-卟啉。该产物聚合物的平均分子量为12,884克/摩尔，重均分子量为14,338克/摩尔，具有稳健的红色磷光发射。类似地制备了含卟啉的共聚物，其结构单元源自9,9-二辛基-2-乙烯基芴和9-蒽甲基丙烯酸甲酯。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP
  申请人：Shibayama Wataru

  公开号：US20110143149A1

  公开（公告）日：2011-06-16

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R 1 a R 2 b Si(R 3 ) 4-(a+b) . A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部防反射涂层的抗蚀底层膜，或者是不与抗蚀剂混合且具有比抗蚀剂更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有离子基的硅烷化合物，其中具有离子基的硅烷化合物是一种可水解的有机硅烷，其分子中具有一个离子基、其水解产物或水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。组合物包括具有离子基的硅烷化合物和不具有离子基的硅烷化合物，其中具有离子基的硅烷化合物在整个硅烷化合物中的摩尔比例小于1％，例如为0.01到0.95％。可水解的有机硅烷可以是式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按照权利要求1至14中的任一项涂布到半导体基片上并烘烤所得到的抗蚀底层膜。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP
  申请人：Shibayama Wataru

  公开号：US20110287369A1

  公开（公告）日：2011-11-24

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) (1). A composition comprising a mixture of a hydrolyzable organosilane of Formula (1), and at least one organic silicon compound selected from the group consisting of a compound of Formula (2): R 4 a Si(R 5 ) 4−a (2) and a compound of Formula (3): [R 6 c Si(R 7 ) 3−c ] 2 Y b (3); a hydrolysis product of the mixture; or a hydrolysis-condensation product of the mixture.

  提供了一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬膜的抗蚀底层膜。该抗蚀底层膜形成组合物包括含有阴离子基团的硅烷化合物，其中含有阴离子基团的硅烷化合物是一种可水解的有机硅烷，其中含有阴离子基团的有机基团与硅原子键合，阴离子基团形成盐结构，其水解产物或水解缩合产物。阴离子基团可以是羧酸阴离子、酚酸盐阴离子、磺酸盐阴离子或磷酸盐阴离子。可水解的有机硅烷可以是式（1）的化合物：R1aR2bSi（R3）4−（a+b）（1）。组合物包括式（1）的可水解有机硅烷的混合物，以及选择自化合物组中的至少一种有机硅化合物的混合物，该组具有式（2）的化合物：R4aSi（R5）4−a（2）和式（3）的化合物：[R6cSi（R7）3−c] 2Yb（3）；该混合物的水解产物；或该混合物的水解缩合产物。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。