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Bis(2-allyloxyphenyl) methane | 71355-88-9

中文名称
——
中文别名
——
英文名称
Bis(2-allyloxyphenyl) methane
英文别名
1-prop-2-enoxy-2-[(2-prop-2-enoxyphenyl)methyl]benzene
Bis(2-allyloxyphenyl) methane化学式
CAS
71355-88-9
化学式
C19H20O2
mdl
——
分子量
280.4
InChiKey
ATBANLMXJMAXRO-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.1
  • 重原子数:
    21
  • 可旋转键数:
    8
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.16
  • 拓扑面积:
    18.5
  • 氢给体数:
    0
  • 氢受体数:
    2

文献信息

  • ADHESIVE FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MADE WITH THE SAME
    申请人:Sumitomo Bakelite Co., Ltd.
    公开号:EP2136393A1
    公开(公告)日:2009-12-23
    There isprovidedan adhesive film for a semiconductor, comprising a thermoplastic resin (A), an epoxy resin (B) and a curing agent (C), wherein a minimum melt viscosity of said adhesive film for a semiconductor is 0.1 Pa·s to 500 Pa·s both inclusive in a temperature range of 50 °C to 180 °C both inclusive at a temperature-rise rate of 10 °C/min from room temperature and a content of volatile component is 5.0 % or less.
    提供了一种半导体用胶膜,由热塑性树脂 (A)、环氧树脂 (B) 和固化剂 (C) 组成,其中所述半导体用胶膜的最小熔融粘度为 0.1 Pa-s 至 500 Pa-s(含),温度范围为 50 °C 至 180 °C(含),从室温开始的升温速率为 10 °C/min (含),挥发性成分的含量为 5.0 % 或以下。
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    申请人:Sumitomo Bakelite Co., Ltd.
    公开号:EP2341529A1
    公开(公告)日:2011-07-06
    Provided is a method of manufacturing a semiconductor device capable of adhering semiconductor elements and a support member for mounting semiconductor elements, such as lead frames, organic substrates or the like, even in a relatively low temperature range without damaging adhesion property and workability and of suppressing the occurrence of voids. The method of manufacturing a semiconductor device according to the invention is a method of manufacturing a semiconductor device comprising a semiconductor element and a support member adhered to the semiconductor element through a cured material of an adhesive film, wherein the method comprises the steps (a) to (d) in this order; (a) preparing adhesive film-attached semiconductor elements; (b) thermocompression-bonding said adhesive film-attached semiconductor elements to said support member so as to obtain a semiconductor part made of said adhesive film-attached semiconductor elements and said support member; (c) heating and pressurizing said semiconductor part made of said adhesive film-attached semiconductor elements and said support member using a pressurized fluid so as to proceed with curing of adhesive film; and (d) electrically connecting said adhesive film-attached semiconductor elements and said support member.
    本发明提供了一种半导体器件的制造方法,即使在相对较低的温度范围内,也能粘附半导体元件和用于安装半导体元件(如引线框架、有机基板等)的支撑件,而不会破坏粘附性能和加工性,并能抑制空洞的出现。根据本发明的半导体器件制造方法是一种制造半导体器件的方法,该半导体器件包括半导体元件和通过胶膜固化材料粘附在半导体元件上的支撑件,其中该方法包括按以下顺序排列的步骤(a)至(d); (a) 制备粘合剂薄膜附着的半导体元件; (b) 将所述粘合剂薄膜附着的半导体元件热压粘合到所述支撑件上,以获得由所述粘合剂薄膜附着的半导体元件和所述支撑件构成的半导体部件; (c) 使用加压流体加热和加压由所述粘合剂薄膜附着的半导体元件和所述支承部件制成的所述半导体部件,以便进行粘合剂薄膜的固化;以及 (d) 将所述粘合膜附着的半导体元件和所述支撑件电连接。
  • Adhesive Film for Semiconductor and Semiconductor Device Therewith
    申请人:Yasuda Hiroyuki
    公开号:US20090230568A1
    公开(公告)日:2009-09-17
    There is provided an adhesive film for a semiconductor, comprising a thermoplastic resin (A), an epoxy resin (B) and a curing agent (C), wherein a minimum melt viscosity of said adhesive film for a semiconductor is 0.1 Pa·s to 500 Pa·s both inclusive in a temperature range of 50° C. to 180° C. both inclusive at a temperature-rise rate of 10° C./min from room temperature and a content of volatile component is 5.0% or less.
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    申请人:Sasaki Akitsugu
    公开号:US20110180939A1
    公开(公告)日:2011-07-28
    Provided is a method of manufacturing a semiconductor device capable of adhering semiconductor elements and a support member for mounting semiconductor elements, such as lead frames, organic substrates or the like, even in a relatively low temperature range without damaging adhesion property and workability and of suppressing the occurrence of voids. The method of manufacturing a semiconductor device according to the invention is a method of manufacturing a semiconductor device comprising a semiconductor element and a support member adhered to the semiconductor element through a cured material of an adhesive film, wherein the method comprises the steps (a) to (d) in this order; (a) preparing adhesive film-attached semiconductor elements; (b) thermocompression-bonding said adhesive film-attached semiconductor elements to said support member so as to obtain a semiconductor part made of said adhesive film-attached semiconductor elements and said support member; (c) heating and pressurizing said semiconductor part made of said adhesive film-attached semiconductor elements and said support member using a pressurized fluid so as to proceed with curing of adhesive film; and (d) electrically connecting said adhesive film-attached semiconductor elements and said support member.
  • US8436479B2
    申请人:——
    公开号:US8436479B2
    公开(公告)日:2013-05-07
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