2,2,3-Trifluorohexane

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 有机氟化物
• 英文名称: 2,2,3-Trifluorohexane
• 英文别名: 2,2,3-trifluorohexane
• 化学式: C₆H₁₁F₃
• 分子量: 140.15
• InChiKey: USQKFGCFRAAHDP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  9
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210141306A1

  公开（公告）日：2021-05-13

  A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W 1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W 2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M + represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

  一种抗蚀组合物，包含：（A）一种树脂，其中包含具有酸敏基团的重复单元，且不含芳香基取代的重复单元；（B）一种通过通式（B-1）表示的光酸发生剂；以及（C）一种溶剂，其中W1表示具有4至12个碳原子且含有杂原子的环状二价碳氢基团；W2表示具有4至14个碳原子且不含杂原子的环状一价碳氢基团；Rf表示由以下通式表示的二价有机基团；M+表示一个离子阳离子。这提供了一种抗蚀组合物和使用该抗蚀组合物的图案化过程，该过程在光刻工艺中特别显示出有利的掩模尺寸依赖性（掩模误差因子：MEF）、线宽粗糙度（LWR）和临界尺寸均匀性（CDU），特别是在使用高能量光源，如ArF准分子激光器光束时。
• Resist composition and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11340527B2

  公开（公告）日：2022-05-24

  A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

  一种抗蚀剂组合物，含有(A) 含有具有酸亲和基的重复单元且不含具有芳香取代基的重复单元的树脂；(B) 通式(B-1)所示的光酸发生器；以及 (C) 溶剂，其中 W1 代表具有 4 至 12 个碳原子且含有一个杂原子的环状二价烃基；W2 代表具有 4 至 14 个碳原子且不含杂原子的环状一价烃基团； Rf 代表如下通式所示的二价有机基团；以及 M+ 代表鎓阳离子。这就提供了一种抗蚀剂组合物和一种使用该抗蚀剂组合物的图案化工艺，尤其是在使用高能光束（如 ArF 准分子激光束）作为光源的光刻技术中，该抗蚀剂组合物和图案化工艺显示出特别有利的掩膜尺寸相关性（掩膜误差因子：MEF）、低温均匀性和临界尺寸均匀性（CDU）。