4-[(2-Bromoacetyl)amino]benzenesulfonic acid

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-[(2-Bromoacetyl)amino]benzenesulfonic acid
• 化学式: C₈H₈BrNO₄S
• 分子量: 294.12
• InChiKey: YUIJBGGEHDBANC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.9
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  91.8
• 氢给体数：
  2
• 氢受体数：
  4

文献信息

• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION
  申请人：INASAKI Takeshi

  公开号：US20130029255A1

  公开（公告）日：2013-01-31

  Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) which contains at least one phenolic hydroxyl group and at least one group where a hydrogen atom in a phenolic hydroxyl group is substituted by a group represented by the following General Formula (1). (in the formula, each of R 11 and R 12 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; X 11 represents an aryl group; M 11 represents a single bond or a divalent linking group; and Q 11 represents an alkyl group, a cycloalkyl group or an aryl group, wherein the number of carbon atoms which are included in the group represented by -M 11 -Q 11 is 3 or more, and at least two of R 11 , R 12 , Q 11 , and X 11 may form a ring by bonding to each other)

  提供的是一种感光树脂组合物，其中包含至少含有一个酚羟基和至少一个氢原子被以下通式（1）所代表的基替换的基团的化合物（A）。（在通式中，R11和R12分别独立地表示氢原子、烷基、环烷基、芳基或芳基烷基；X11表示芳基；M11表示单键或二价连接基团；Q11表示烷基、环烷基或芳基，其中包含在-M11-Q11所代表的基团中的碳原子数为3或更多，并且R11、R12、Q11和X11中至少有两个可以通过相互键合形成环）
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM Corporation

  公开号：EP2721446B1

  公开（公告）日：2017-11-22
• CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION
  申请人：INASAKI Takeshi

  公开号：US20120202141A1

  公开（公告）日：2012-08-09

  The object of the present invention is to solve the technical problems in the microfabrication of photomasks or semiconductors and is, in particular, to provide a chemical amplification type positive resist film, and a resist film, resist coated mask blanks and a method of forming a resist pattern using the composition, which satisfy at the same time all of high sensitivity, high resolution (for example, high resolving power), good exposure latitude (EL), and good line edge roughness (LER). A chemical amplification type positive resist composition comprising: a high molecular compound (A) having a repeating unit represented by the following general formula (1), a repeating unit represented by the following general formula (2), and a repeating unit represented by the following general formula (3).
• US8673538B2
  申请人：——

  公开号：US8673538B2

  公开（公告）日：2014-03-18
• US9235116B2
  申请人：——

  公开号：US9235116B2

  公开（公告）日：2016-01-12