The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.
本发明的
钴化合物由以下通式 (I) 表示。在通式(I)中,R1 至 R3 分别代表具有 1 至 5 个碳原子的直链或支链烷基。此外,本发明的成膜原料还含有通式(I)表示的
钴化合物。根据本发明,可以提供一种
钴化合物,该
钴化合物因熔点低而可以液体形式运输,因蒸汽压高而可以在低温下分解并容易汽化;还可以提供一种使用该
钴化合物的成膜原料。