Flüchtige Seltenerdmetall Alkoxide, insbesondere zur Herstellung von Seltenerdmetall Oxiden, sowie Alkohole zum Synthetisieren von flüchtigen Verbindungen
申请人:Patent-Treuhand-Gesellschaft
für elektrische Glühlampen mbH
公开号:EP0563557A2
公开(公告)日:1993-10-06
Seltenerdmetall-Alkoxide hoher Löslichkeit und Flüchtigkeit zeichnen sich durch Liganden OR mit Donorfunktionalitäten aus. Die Liganden bilden - unter Einschluß des zentralen Seltenerdmetallatoms - einen fünf- oder sechsteiligen Ring, der das Metallatom, ein benachbartes Sauerstoffatom, zwei oder drei Kohlenstoffatome und ein Donoratom (N oder O) umfaßt, wobei die organischen Reste überwiegend H-Atome, Methyl-, Ethyl-, Isopropyl- oder tert.-Butylgruppen sein können.
具有高溶解性和挥发性的稀土金属烷氧基化合物的特点是配体 OR 具有供体功能。这些配体与中心稀土金属原子形成一个五元或六元环,该环由金属原子、邻近的氧原子、两个或三个碳原子和一个供体原子(N 或 O)组成,其中的有机基主要是 H 原子、甲基、乙基、异丙基或叔丁基。
COBALT COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, AND METHOD FOR PRODUCING THIN FILM
申请人:Adeka Corporation
公开号:EP3144313A1
公开(公告)日:2017-03-22
The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.
COBALT COMPOUND, THIN FILM-FORMING RAW MATERIAL, AND METHOD FOR PRODUCING THIN FILM
申请人:ADEKA CORPORATION
公开号:US20170050998A1
公开(公告)日:2017-02-23
The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R
1
to R
3
independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.
US9994593B2
申请人:——
公开号:US9994593B2
公开(公告)日:2018-06-12
Herrmann, Wolfgang A.; Anwander, Reiner; Denk, Michael, Chemische Berichte, 1992, vol. 125, # 11, p. 2399 - 2406
作者:Herrmann, Wolfgang A.、Anwander, Reiner、Denk, Michael