N-(4-methylpentyl)benzenesulfonamide

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: N-(4-methylpentyl)benzenesulfonamide
• 化学式: C₁₂H₁₉NO₂S
• mdl: MFCD02973844
• 分子量: 241.354
• InChiKey: DSNHICHHSQRHIO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  16
• 可旋转键数：
  6
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  54.6
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  N-(4-methylpentyl)benzenesulfonamide 在 sodium hydride 、 N-氟代双苯磺酰胺 作用下， 以 二氯甲烷 、 mineral oil 为溶剂， 生成 N-fluoro-N-(4-methylpentyl)benzenesulfonamide
  参考文献：
  名称：

  铜催化、N 定向的远端 C(sp3)–H 功能化对 Azepanes

  摘要：

  我们在此报道了铜催化的N-氟磺酰胺和 1,3-二烯/1,3-烯炔的正式 [5 + 2] 氮杂环化反应，用于合成结构多样的含烯烃/炔烃的氮杂环庚烷。该反应具有选择性功能化远端未活化的 C(sp 3 )–H 键和广泛的底物范围，从而允许对药物和天然产物进行后期修饰。提出了一种涉及 N-自由基的 1,5-氢原子转移、烷基自由基与 1,3-二烯/1,3-烯炔的轻松偶联以及通过 C-N 键形成构建氮杂环庚烷基序的自由基机制。

  DOI：

  10.1021/acs.orglett.2c03135

文献信息

• Catalytic alkylation of remote C–H bonds enabled by proton-coupled electron transfer
  作者：Gilbert J. Choi、Qilei Zhu、David C. Miller、Carol J. Gu、Robert R. Knowles

  DOI：10.1038/nature19811

  日期：2016.11

  unfunctionalized amides to direct the formation of new C–C bonds. Given the prevalence of amides in pharmaceuticals and natural products, we anticipate that this method will simplify the synthesis and structural elaboration of amine-containing targets. Moreover, this study demonstrates that concerted proton-coupled electron transfer can enable homolytic activation of common organic functional groups

  尽管在氢原子转移 (HAT) 催化方面取得了进展，但目前还没有能够均解 N-烷基酰胺的强氮氢 (N-H) 键的分子 HAT 催化剂。开发酰胺均裂方案的动机源于所得酰胺基自由基的效用，其参与各种合成有用的转化，包括烯烃胺化和定向碳氢 (C-H) 键功能化。在后一个过程中——经典的 Hofmann-Löffler-Freytag 反应的一个子集——酰胺自由基从未活化的脂肪族 C-H 键中去除氢原子。尽管功能强大，但这些转化通常需要对酰胺原料进行氧化 N-预官能化，以实现有效的酰胺基生成。而且，因为这些 N 活化基团经常被结合到最终产品中，这些方法通常不适合直接构建碳 - 碳（C-C）键。在这里，我们报告了一种通过质子耦合电子转移使 N-烷基酰胺的 N-H 键均裂来克服这些限制的方法。在该协议中，激发态铱光催化剂和弱磷酸盐碱协同作用，以协同的基本步骤从酰胺底物中去除质子和电子。所得的酰胺基自由基中间体被证明可以促进后续的
• SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING HALOGENATED SULFONYLALKYL GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170168397A1

  公开（公告）日：2017-06-15

  A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) [where R 1 is an organic group of Formula (2): —R 4 —R 5 —R 6 Formula (2) (where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate, followed by baking. The underlayer film-forming composition may include acid as a hydrolysis catalyst, or water.
• ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20200225584A1

  公开（公告）日：2020-07-16

  A composition for forming a resist underlayer film for lithography, the resist underlayer film for lithography containing silicon and being dissolved and removed with an alkaline developer in accordance with a resist pattern together with an upper layer resist during development of the upper layer resist, the composition comprising a component, which is a silane compound containing a hydrolyzable silane, a hydrolysate of the silane, a hydrolytic condensate of the silane, or any combination of these, and an element, which is an element of causing dissolution in an alkaline developer. The element, which is an element of causing dissolution in an alkaline developer, is contained in the structure of the compound as the component. The element, which is an element of causing dissolution in an alkaline developer, is a photoacid generator.