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Hexakis(1H,1H-perfluorooctyloxy)phosphazene | 186043-52-7

中文名称
——
中文别名
——
英文名称
Hexakis(1H,1H-perfluorooctyloxy)phosphazene
英文别名
2,2,4,4,6,6-hexakis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctoxy)-1,3,5-triaza-2λ5,4λ5,6λ5-triphosphacyclohexa-1,3,5-triene
Hexakis(1H,1H-perfluorooctyloxy)phosphazene化学式
CAS
186043-52-7
化学式
C48H12F90N3O6P3
mdl
——
分子量
2529.4
InChiKey
MJLMFELZHDEELW-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    31.7
  • 重原子数:
    150
  • 可旋转键数:
    48
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    92.5
  • 氢给体数:
    0
  • 氢受体数:
    99

文献信息

  • Silicon-based energy storage devices with phosphazene containing electrolyte additives
    申请人:ENEVATE CORPORATION
    公开号:US11522223B2
    公开(公告)日:2022-12-06
    Electrolytes and electrolyte additives for energy storage devices comprising phosphazene based compounds are disclosed. The energy storage device comprises a first electrode and a second electrode, wherein at least one of the first electrode and the second electrode is a Si-based electrode, a separator between the first electrode and the second electrode, an electrolyte comprising at least two electrolyte co-solvents, wherein at least one electrolyte co-solvent comprises a phosphazene based compound.
    本发明公开了用于储能装置的电解质和电解质添加剂,其中包含磷苯基化合物。该储能装置包括第一电极和第二电极,其中第一电极和第二电极中的至少一个是硅基电极;第一电极和第二电极之间的隔板;电解液,包括至少两种电解液助溶剂,其中至少一种电解液助溶剂包括磷苯基化合物。
  • SILICON-BASED ENERGY STORAGE DEVICES WITH PHOSPHAZENE CONTAINING ELECTROLYTE ADDITIVES
    申请人:Enevate Corporation
    公开号:EP3874556A1
    公开(公告)日:2021-09-08
  • US5872357A
    申请人:——
    公开号:US5872357A
    公开(公告)日:1999-02-16
  • [EN] PATTERNING A CONDUCTIVE DEPOSITED LAYER USING A NUCLEATION INHIBITING COATING AND AN UNDERLYING METALLIC COATING<br/>[FR] FORMATION DE MOTIFS SUR UNE COUCHE CONDUCTRICE DÉPOSÉE À L'AIDE DE REVÊTEMENT INHIBITEUR DE NUCLÉATION ET REVÊTEMENT MÉTALLIQUE SOUS-JACENT
    申请人:[en]OTI LUMIONICS INC.
    公开号:WO2022123431A1
    公开(公告)日:2022-06-16
    A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.
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