[EN] PHOTOACTIVE OPTOELECTRONIC AND TRANSISTOR DEVICES<br/>[FR] DISPOSITIFS OPTOÉLECTRONIQUES PHOTOACTIFS ET À TRANSISTORS
申请人:COMMW SCIENT IND RES ORG
公开号:WO2014026244A1
公开(公告)日:2014-02-20
The present invention relates to photoactive optoelectronic devices, such as organic photovoltaic devices, and transistor devices, and to organic compounds for use in the optoelectronic and transistor devices. The present invention also relates to processes for preparing photoactive optoelectronic and transistor devices. The photoactive optoelectronic devices comprise a first and second electrode, and at least one organic light-absorbing electroactive layer in electrical connection with the first and second electrodes that generates an electrical current in response to electromagnetic radiation. The light-absorbing electroactive layer comprises an electron donor material and an electron acceptor material, the electron acceptor material comprising a compound as described herein.
<i>N</i>-Alkyl functionalized barbituric and thiobarbituric acid bithiophene derivatives for vacuum deposited n-channel OFETs
作者:Ying Shu、Annabel Mikosch、Kevin N. Winzenberg、Peter Kemppinen、Christopher D. Easton、Ante Bilic、Craig M. Forsyth、Christopher J. Dunn、Th. Birendra Singh、Gavin E. Collis
DOI:10.1039/c4tc00002a
日期:——
Modification of the barbituric acid acceptor group results in structural and optoelectronic changes that provide electron mobilities nearing 0.3 cm2 V−1 s−1.