4-(diisopropylamino)benzoic acid | 22090-23-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-(diisopropylamino)benzoic acid
• 英文别名: p-Diisopropylamino-benzoesaeure；4-Diisopropylamino-benzoesaeure；4-[Di(propan-2-yl)amino]benzoic acid
• CAS: 22090-23-9
• 化学式: C₁₃H₁₉NO₂
• 分子量: 221.299
• InChiKey: SWXVEXLYWWGQPK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.46
• 拓扑面积：
  40.5
• 氢给体数：
  1
• 氢受体数：
  3

文献信息

• SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160090355A1

  公开（公告）日：2016-03-31

  A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R 01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0≦k≦5+4m, R 101 , R 102 and R 103 are a monovalent hydrocarbon group, or at least two of R 101 , R 102 and R 103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

  提供一种化学式为（0-1）的磺鎓盐，其中W是烷基或芳基，R01是一价碳氢基团，m为0、1或2，k为整数：0≦k≦5+4m，R101、R102和R103是一价碳氢基团，或者R101、R102和R103中至少两个可以相互结合形成与硫原子的环，L是单键、酯、磺酸酯、碳酸酯或氨基甲酸酯键。包含磺鎓盐作为PAG的抗蚀组成物在经过电子束或极紫外光刻过程时表现出非常高的分辨率。可获得具有最小LER的图案。
• Chemically amplified positive resist composition and resist patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2202577A1

  公开（公告）日：2010-06-30

  There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic hydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method. There can be provided, in lithography, a chemically amplified positive resist composition giving a high resolution with a suppressed LER deterioration caused by film-thinning at the time of forming a chemically amplified resist film with the film thickness of 10 to 100 nm, and a resist patterning process using the same.

  本发明公开了一种用于形成光刻中使用的化学放大抗蚀剂薄膜的化学放大正向抗蚀剂组合物，其中化学放大正向抗蚀剂组合物至少包括：(A) 碱性树脂，不溶于或难溶于碱性溶液，其重复单元的酚羟基被叔烷基保护，而当叔烷基被除去时可溶于碱性溶液；(B) 酸发生器； (C) 碱性成分；以及 (D) 有机溶剂，并控制固体成分的浓度，从而通过旋涂方法获得膜厚为 10 至 100 nm 的化学放大抗蚀剂薄膜。在光刻技术中，可以提供一种化学放大正向抗蚀剂组合物，该组合物在形成膜厚为 10 至 100 纳米的化学放大抗蚀剂膜时，可抑制由膜变薄引起的 LER 劣化，从而具有高分辨率，还可以提供使用该组合物的抗蚀剂图案化工艺。
• Negative resist composition and patterning process using the same
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2256552A1

  公开（公告）日：2010-12-01

  There is disclosed a negative resist composition comprising (A) a base polymer which is soluble in alkali and which is insolubilized in alkali by an action of an acid; and/or a combination of a crosslinking agent and a base polymer which is soluble in alkali and which is reacted with the crosslinking agent by an action of an acid to thereby be insolubilized in alkali, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component; wherein the polymer to be used as the base polymer is: a polymer, which is obtained by polymerizing two or more kinds of monomers represented by the following general formula (1), or which is obtained by polymerizing a monomer mixture containing one or more kinds of monomers represented by the general formula (1) and one or more kinds of styrene monomers represented by the following general formula (2); or a polymer obtained by subjecting the functional groups of the polymerizedly obtained polymer to a further chemical conversion; and wherein the repeating units derived from the monomers represented by the general formula (1) are included in the obtained polymer at a sum ratio of 50 mole% or more relative to a total amount of all repeating units constituting the obtained polymer. There can be provided a negative resist composition having an excellent resolution and an enhanced etching resistance in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a patterning process using the same.

  本发明公开了一种抗蚀剂组合物，该组合物包括(A)可溶于碱且在酸的作用下在碱中不溶解的碱基聚合物；和/或交联剂与可溶于碱且在酸的作用下与交联剂反应从而在碱中不溶解的碱基聚合物的组合，(B)酸发生剂，和(C)作为碱性组分的含氮化合物；其中用作碱基聚合物的聚合物是：(A)可溶于碱且在酸的作用下在碱中不溶解的碱基聚合物，(B)酸发生剂，和(C)作为碱性组分的含氮化合物：通过聚合两种或两种以上由以下通式（1）表示的单体而得到的聚合物，或通过聚合含有一种或多种由以下通式（1）表示的单体和一种或多种由以下通式（2）表示的苯乙烯单体的单体混合物而得到的聚合物；或将聚合得到的聚合物的官能团进行进一步化学转化而得到的聚合物；以及 其中，由通式（1）代表的单体衍生的重复单元以相对于构成所得到的聚合物的所有重复单元总量 50 摩尔％或更高的总和比率包含在所得到的聚合物中。本发明可提供一种在用于精细加工的光刻技术中，特别是在采用 KrF 激光、极紫外线、电子束、X 射线或类似光源作为曝光源的光刻技术中，具有优异的分辨率和增强的抗蚀刻性的负型抗蚀剂组合物；以及使用该组合物的图案化工艺。
• Negative resist composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2330463A1

  公开（公告）日：2011-06-08

  There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.

  本发明公开了一种负型抗蚀剂组合物，其中基体树脂至少含有以下通式(1)和通式(2)所代表的重复单元，且其重量平均分子量为 1,000 至 10,000，而含有氮原子作为基本成分的化合物含有一种或多种具有羧基且不具有与基心氮原子共价键合的氢原子的胺化合物。这种负型抗蚀剂组合物几乎不会产生桥接，对基底的依赖性低，可以形成高灵敏度和高分辨率的图案，还可以使用这种负型抗蚀剂组合物和图案化工艺。
• NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：TANAKA Akinobu

  公开号：US20110129765A1

  公开（公告）日：2011-06-02

  There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.