TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYMER OF POLYIMIDE PRECURSOR AND METHOD FOR PRODUCING SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20180120702A1
公开(公告)日:2018-05-03
The present invention provides a tetracarboxylic acid diester compound represented by the following general formula (1),
wherein, X
1
represents a tetravalent organic group, and R
1
represents a group represented by the following general formula (2),
wherein, the dotted line represents a bonding, Y
1
represents an organic group with a valency of k+1, Rs represents a group containing at least one silicon atom, “k” represents 1, 2 or 3, and “n” represents 0 or 1. There can be provided a tetracarboxylic acid diester compound which can lead a polymer of a polyimide precursor capable of using a base resin of a negative photosensitive resin composition which is capable of forming a fine pattern and giving high resolution, a polymer of a polyimide precursor obtained by using the tetracarboxylic acid diester compound and a method for producing the same.
Polyether, active-hydrogen ingredient , resin-forming composition, and process for producing foam
申请人:——
公开号:US20030100623A1
公开(公告)日:2003-05-29
The present invention relates to polyether compounds, active hydrogen compounds and resin-forming compositions composed of the polyols, and methods for producing foams by employing the active hydrogen components. These polyether compounds have a decreased number of moles of added EO thereby maintaining the hydrophobicity and have sufficient reactivity as polyol components of resins, thereby having high reaction rates. Therefore, it is possible to provide resins having excellent resin properties (tensile strength, flexural strength, water-absorption swelling ratio, etc.).
SILICONE SKELETON-CONTAINING POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, SUBSTRATE, AND SEMICONDUCTOR APPARATUS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20160200877A1
公开(公告)日:2016-07-14
The present invention provides a silicone skeleton-containing polymer compound containing a repeating unit shown by the general formula (1). There can be provided a silicone skeleton-containing polymer compound suitable used as a base resin of a chemically amplified negative resist composition that can remedy the problem of delamination generated on a metal wiring such as Cu and Al, an electrode, and a substrate, especially on a substrate such as SiN, and can form a fine pattern without generating a scum and a footing profile in the pattern bottom and on the substrate.
SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20160033865A1
公开(公告)日:2016-02-04
A silicone structure-bearing polymer comprising recurring units derived from a bis(4-hydroxy-3-allylphenyl) derivative and having a Mw of 3,000-500,000 is provided. A chemically amplified negative resist composition comprising the polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.
SILICONE SKELETON-CONTAINING POLYMER COMPOUND AND METHOD FOR PRODUCING SAME, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, AND SUBSTRATE
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20160097973A1
公开(公告)日:2016-04-07
The present invention provides a silicone skeleton-containing polymer compound containing a repeating unit shown by the general formula (1) and having a weight average molecular weight of 3,000 to 500,000. There can be provided a silicone skeleton-containing polymer compound suitable used as a base resin of a chemically amplified negative resist composition that can remedy the problem of delamination generated on a metal wiring such as Cu and Al, an electrode, and a substrate, especially on a substrate such as SiN, and can form a fine pattern without generating a scum and a footing profile in the pattern bottom and on the substrate when the widely used 2.38% TMAH aqueous solution is used as a developer.