(1-Isopropoxy-2-methyl-propyl)-benzene | 123622-18-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: (1-Isopropoxy-2-methyl-propyl)-benzene
• 英文别名: (2-Methyl-1-propan-2-yloxypropyl)benzene
• CAS: 123622-18-4
• 化学式: C₁₃H₂₀O
• 分子量: 192.301
• InChiKey: CDSIRZSPORRIBX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.7
• 重原子数：
  14
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  1-(1-Isopropoxy-2-methyl-propyl)-1H-benzotriazole 、 alkaline earth salt of/the/ methylsulfuric acid 以 乙醚 、 甲苯 为溶剂， 以73%的产率得到(1-Isopropoxy-2-methyl-propyl)-benzene
  参考文献：
  名称：

  Reactions of 1-(.alpha.-alkoxyalkyl)- and 1-(.alpha.-(aryloxy)alkyl)benzotriazoles with the Grignard reagents. A new and versatile method for the preparation of ethers

  摘要：

  DOI：

  10.1021/jo00287a011

文献信息

• COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20160024005A1

  公开（公告）日：2016-01-28

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising a step of exposing the resist film, and a step of developing the exposed film, and a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

  提供了一种包含下列式子（1）或（2）所代表的化合物的光致射线敏感或辐射敏感的树脂组合物，其中式（1）和（2）的定义如本文所述，以及包括该光致射线敏感或辐射敏感的树脂组合物的光阻膜，以及包括曝光光阻膜的步骤和显影曝光膜的步骤的图案形成方法，以及包括图案形成方法的制造电子装置的方法，以及由电子装置的制造方法制造的电子装置。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
  申请人：Enomoto Yuichiro

  公开号：US20120282548A1

  公开（公告）日：2012-11-08

  Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.

  提供的是一种形成图案的方法，包括(i)使用光致或辐射敏感树脂组成物形成薄膜的步骤，(ii)曝光薄膜的步骤，以及(iii)使用有机溶剂含有的显影剂显影曝光后的薄膜的步骤，其中光致或辐射敏感树脂组成物包括(A)一种能够通过酸的作用降低有机溶剂含有的显影剂的溶解度的树脂，(B)一种能够在光致或辐射照射下生成酸的化合物，(D)一种溶剂，以及(G)一种具有氟原子和硅原子中的至少一种，并具有碱性或能够通过酸的作用增加碱性的化合物。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE
  申请人：FUJIFILM CORPORATION

  公开号：US20150185612A1

  公开（公告）日：2015-07-02

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a repeating unit represented by the specific formula and a group capable of decomposing by an action of an acid to produce a polar group; and an ionic compound represented by the specific formula, and a resist film comprising the actinic ray-sensitive or radiation-sensitive resin composition.

  提供一种光致射线敏感或辐射敏感的树脂组合物，包括：（A）具有特定公式表示的重复单元和能够通过酸作用分解产生极性基团的基团的树脂；以及具有特定公式表示的离子化合物，以及包括该光致射线敏感或辐射敏感的树脂组合物的抗蚀膜。
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME
  申请人：Kataoka Shohei

  公开号：US20130017377A1

  公开（公告）日：2013-01-17

  Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa≧1.5 when exposed to actinic rays or radiation.
• PATTERN FORMING METHOD AND RESIST COMPOSITION
  申请人：Iwato Kaoru

  公开号：US20120321855A1

  公开（公告）日：2012-12-20

  Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.