Anthracene-2,7,9-triol

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: Anthracene-2,7,9-triol
• 化学式: C₁₄H₁₀O₃
• 分子量: 226.23
• InChiKey: FWWZGWJVOAEXRX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.4
• 重原子数：
  17
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  60.7
• 氢给体数：
  3
• 氢受体数：
  3

文献信息

• Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group
  申请人：Takei Satoshi

  公开号：US20080102649A1

  公开（公告）日：2008-05-01

  There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

  提供了一种用于半导体器件制造的光刻下层涂层形成组合物，该组合物在与光刻胶相比具有较高的干法蚀刻速率，不与光刻胶混合，并能够使具有高纵横比孔的半导体衬底表面变平。该光刻下层涂层形成组合物包括：具有两个或更多保护羧基的化合物、具有两个或更多环氧基的化合物和溶剂。
• COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1617289A1

  公开（公告）日：2006-01-18

  There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).

  本发明提供了一种用于半导体设备制造的光刻工艺中的光刻用底层涂层形成组合物，以及一种与光刻胶相比干蚀刻率高的底层涂层。具体地说，它是一种无需使用强酸催化剂进行交联反应即可形成底层涂层的组合物，以及一种底层涂层形成组合物，该组合物包含具有环氧基的成分（聚合物、化合物）和具有酚羟基、羧基、保护羧基或酸酐结构的成分（聚合物、化合物）。
• LOWER LAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY INCLUDING NAPHTHALENE RING HAVING HALOGEN ATOM
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1780600A1

  公开（公告）日：2007-05-02

  There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.

  本发明提供了一种用于光刻的底层涂层形成组合物，以及一种与光刻胶相比干蚀刻率高且不会与光刻胶混合的底层涂层，用于半导体设备制造的光刻工艺。具体地说，它是一种底层涂层形成组合物，包括一种聚合物（其结构单元含有萘环，在构成该聚合物的结构单元中被卤原子取代的摩尔比为 0.3 或以上）、一种溶剂。
• COMPOSITION FOR FORMING OF UNDERLAYER FILM FOR LITHOGRAPHY THAT CONTAINS COMPOUND HAVING PROTECTED CARBOXYL
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP1850180A1

  公开（公告）日：2007-10-31

  There is provided an underlayer coating forming composition for lithography that is used in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to photoresists, does not intermix with photoresists, and is capable of flattening the surface of a semi conductor substrate having holes of a high aspect ratio. The underlayer coating forming composition for lithography comprises, a compound having two or more protected carboxylic groups, a compound having two or more epoxy groups, and a solvent.

  本发明提供了一种用于光刻的底层涂层形成组合物，该组合物可用于半导体器件制造的光刻工艺中，与光刻胶相比，该组合物具有较高的干蚀刻率，不会与光刻胶混合，并且能够使具有高纵横比孔的半导体基板表面平整。 用于光刻的底层涂层形成组合物包括：具有两个或两个以上受保护羧基的化合物、具有两个或两个以上环氧基的化合物和溶剂。
• COMPOSITION CONTAINING HYDROXYLATED CONDENSATION RESIN FOR FORMING FILM UNDER RESIST
  申请人：Nissan Chemical Industries, Ltd.

  公开号：EP2042927A1

  公开（公告）日：2009-04-01

  Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): (where Y represents a C1-10 alkylene group or a C6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.

  本发明公开了一种用于形成抗蚀剂底层膜的平版印刷组合物，该组合物可在制造半导体设备的平版印刷工艺中用作下层抗反射膜，通过该膜可以抑制照射在形成于半导体衬底上的光刻胶上的曝光光从衬底上反射出去；还可用作用于将表面凹凸不平的半导体衬底压平的平版印刷膜，以填充形成于半导体衬底上的孔洞；还可用作防止光刻胶在加热/燃烧过程中被半导体衬底产生的物质污染的膜等。用于形成抗蚀剂底层的平版印刷组合物包括具有式（1）结构的聚合物： (其中 Y 代表 C1-10 亚烷基或 C6-14 芳环，条件是亚烷基和芳环具有一个或多个羟基，其数目不大于亚烷基和芳环的可取代氢原子数）；以及溶剂。