triphenylsulfonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate | 1021162-86-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: triphenylsulfonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate
• 英文别名: Triphenylsulfonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate；1,1,3,3,3-pentafluoro-2-(2-methylprop-2-enoyloxy)propane-1-sulfonate;triphenylsulfanium
• CAS: 1021162-86-6
• 化学式: C₇H₆F₅O₅S*C₁₈H₁₅S
• 分子量: 560.563
• InChiKey: BMAZNSJRHJFTBF-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  5.96
• 重原子数：
  37
• 可旋转键数：
  7
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.16
• 拓扑面积：
  92.9
• 氢给体数：
  0
• 氢受体数：
  10

反应信息

• 作为产物：
  描述：

  triphenylsulfonium 1,1,3,3,3-pentafluoro-2-hydroxypropanesulfonate 、 甲基丙烯酸酐 在 盐酸 、 N,N-dimethylamino-pyridine 、 三乙胺 作用下， 以 乙醚 、 二氯甲烷 、 水 为溶剂， 以51%的产率得到triphenylsulfonium 1,1,3,3,3-pentafluoro-2-methacryloyloxypropane-1-sulfonate
  参考文献：
  名称：

  Sulfonium salt-containing polymer, resist composition, and patterning process

  摘要：

  公开号：

  EP2112554B1

文献信息

• MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Hatakeyama Jun

  公开号：US20110294070A1

  公开（公告）日：2011-12-01

  A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance.

  一种聚合物是由一种具有酸敏感基团的羟基苯甲酸甲酯单体合成得到的。该聚合物作为基础树脂的正性光阻组合物具有极高的曝光前后碱溶解速率对比度、高分辨率、曝光后图案的良好轮廓和极小的线边粗糙度、缓慢的酸扩散速率和良好的蚀刻抗性。
• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180180998A1

  公开（公告）日：2018-06-28

  A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

  提供一种负型光刻胶组合物，包括具有公式(A)的磺化物化合物和基础聚合物。该光刻胶组合物在图案形成期间表现出高分辨率，并形成具有最小LER的图案。
• SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20140296561A1

  公开（公告）日：2014-10-02

  A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl(meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER.

  一种含有4-氟苯基的磺鎵盐被引入到聚合物中，该聚合物包含羟基苯基（甲基）丙烯酸酯单元和含酸性易裂解基团的（甲基）丙烯酸酯单元，形成一种聚合物，可用作抗蚀剂组成中的基础树脂。抗蚀剂组成具有高灵敏度、高分辨率和最小化LER。
• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170299963A1

  公开（公告）日：2017-10-19

  A monomer having an onium salt structure represented by formula (1) gives a polymer which is fully compatible with resist components. A resist composition comprising the polymer has advantages including reduced acid diffusion, high sensitivity, high resolution, a good balance of lithography properties, and less defects, and is quite effective for precise micropatterning.

  具有公式（1）所表示的onium盐结构的单体会产生与抗蚀剂组分完全兼容的聚合物。包括该聚合物的抗蚀剂组合物具有降低酸扩散、高灵敏度、高分辨率、良好的光刻特性平衡以及较少的缺陷等优点，对于精确微图案制备非常有效。
• RESIST COMPOSITION, PATTERNING PROCESS, MONOMER, AND COPOLYMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20130309606A1

  公开（公告）日：2013-11-21

  A polymer is obtained from copolymerization of a recurring unit having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and a recurring unit having formula (1) wherein R 1 is methyl, ethyl, propyl, methoxy, ethoxy or propoxy, R 2 is H or CH 3 , and m is 1 to 4. The polymer is used as a base resin to formulate a resist composition, which is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure.

  一种聚合物是通过共聚反应获得的，其中具有羧酸和/或酚羟基的重复单元被取代为酸易裂解基团，而具有公式（1）的重复单元的R1为甲基，乙基，丙基，甲氧基，乙氧基或丙氧基，R2为H或CH3，m为1到4。该聚合物用作基础树脂来制备抗蚀剂组合物，该组合物在曝光前后的碱溶解速率对比、酸扩散控制、分辨率以及曝光后图案的轮廓和边缘粗糙度方面得到改善。