[EN] COMPOSITIONS AND METHODS FOR SELECTIVE POLISHING OF SILICON NITRIDE MATERIALS<br/>[FR] COMPOSITIONS ET PROCÉDÉS POUR LE POLISSAGE SÉLECTIF DE MATÉRIAUX DE NITRURE DE SILICIUM
申请人:CABOT MICROELECTRONICS CORP
公开号:WO2014011678A1
公开(公告)日:2014-01-16
The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, preferably comprises 0.01 to 2 percent by weight of at least one particulate ceria abrasive, 10 to 1000 ppm of at least one non-polymeric unsaturated nitrogen heterocycle compound, 0 to 1000 ppm of at least one cationic polymer, optionally, 0 to 2000 ppm of at least one polyoxyalkylene polymer, and an aqueous carrier therefor. The cationic polymer preferably is selected from a poly(vinylpyridine) polymer, a quaternary ammonium-substituted acrylate polymer, a quaternary ammonium-substituted methacrylate polymer, or a combination thereof. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.