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7,7,8,8-tetracyanoquinodimethane | 80418-18-4

中文名称
——
中文别名
——
英文名称
7,7,8,8-tetracyanoquinodimethane
英文别名
7,7,8,8-tetracyano-p-quinodimethane;2-[4-(Dicyanomethyl)cyclohexa-2,5-dien-1-yl]propanedinitrile
7,7,8,8-tetracyanoquinodimethane化学式
CAS
80418-18-4
化学式
C12H8N4
mdl
——
分子量
208.222
InChiKey
LPTKDOLPCSTINZ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.1
  • 重原子数:
    16
  • 可旋转键数:
    2
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.33
  • 拓扑面积:
    95.2
  • 氢给体数:
    0
  • 氢受体数:
    4

反应信息

  • 作为反应物:
    描述:
    7,7,8,8-tetracyanoquinodimethane 、 2,7-dibutyl benzothieno[3,2-b][1]benzothiophene 以 乙腈 为溶剂, 反应 6.0h, 生成
    参考文献:
    名称:
    N-type field-effect transistors based on layered crystalline donor–acceptor semiconductors with dialkylated benzothienobenzothiophenes as electron donors
    摘要:
    我们报道了具有二烷基苯并噻吩并苯噻吩的分层晶体给体-受体半导体的结构、电子和场效应晶体管特性。
    DOI:
    10.1039/c4tc02481h
点击查看最新优质反应信息

文献信息

  • Aniline derivatives and uses thereof
    申请人:NISSAN CHEMICAL INDUSTRIES, LTD.
    公开号:US10700283B2
    公开(公告)日:2020-06-30
    Aniline derivatives such as those represented by the formula shown, for example, have good solubility with respect to organic solvents, and are able to provide an organic electroluminescent element having excellent luminance characteristics when a thin film containing said aniline derivatives is used as a charge transporting substance in a hole injection layer. (In the formula, DPA represents a diphenylamino group.)
    例如,如图所示式子所代表的苯胺衍生物对有机溶剂具有良好的溶解性,当含有上述苯胺衍生物的薄膜用作孔注入层中的电荷传输物质时,能够提供具有优异发光特性的有机电致发光元件。 (式中,DPA 代表二苯基氨基)。
  • Electron-Transferred Donor/Acceptor Ferrimagnet with <i>T</i><sub>C</sub> = 91 K in a Layered Assembly of Paddlewheel [Ru<sub>2</sub>] Units and TCNQ
    作者:Wataru Kosaka、Hiroki Fukunaga、Hitoshi Miyasaka
    DOI:10.1021/acs.inorgchem.5b01776
    日期:2015.10.19
    The donor (D)/acceptor (A) assembly reaction of the paddlewheel-type diruthenium(II,II) complex [Ru-2(2,4,6-F3PhCO2)(4)(THF)(2)] (2,4,6-F3PhCO2- = 2,4,6-trifluorobenzoate; abbreviated hereafter as [Ru-2]) with 7,7,8,8-tetracyano-p-quinodimethane (TCNQ) in a p-xylene/CH2Cl2 solvent system led to the formation of a two-dimensional layered compound, [Ru-2(2,4,6-F3PhCO2)(4)}(2)(TCNQ)]center dot 2(p-xylene)center dot 2CH(2)Cl(2) (1). As expected from this D/A combination, 1 has a one-electrontransfer ionic state with the D(2)(0.5+)A(-) formulation. This state formally derives a heterospin state composed of S = 1 for [Ru-2(II,II)], S = 3/2 for [Ru-2(II,III)], and S = 1/2 for TCNQ(center dot-), possibly causing intralayer ferrimagnetic spin ordering. Most of these types of compounds have an antiferromagnetic ground state because of the coupling of ferrimagnetically ordered layers in dipole antiferromagnetic interactions. However, 1 became a three-dimensional ferrimagnet with T-C = 91 K because of the presence of interlayer ferromagnetic interactions.
  • Carbon Nanostructure Electrode Based Sensors: Devices, Processes and Uses Thereof
    申请人:Man Piu Francis
    公开号:US20090278556A1
    公开(公告)日:2009-11-12
    Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed. Also disclosed are devices comprising nanostructured electrodes and methods for measuring free chlorine in an aqueous environment. Also disclosed are diamond coated electrodes for use in electrochemical applications.
  • CNT-BASED SENSORS: DEVICES, PROCESSES AND USES THEREOF
    申请人:Pace Salvatore J.
    公开号:US20110163296A1
    公开(公告)日:2011-07-07
    Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.
  • CNT-BASED SENSORS: DEVICES, PROCESSES AND USES THEREOF
    申请人:NANOSELECT, INC.
    公开号:US20150137189A1
    公开(公告)日:2015-05-21
    Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.
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