Poly(3,4-ethylenedioxythiophene), PEDOT, films are used as antistatic coatings on electrically insulating substrates such as plastic and glass. A novel method for the synthesis of conducting PEDOT films on insulators relies on solâgel chemistry to attach a di-Si(OEt)3 functionalized free radical initiator (AIBN) on oxidized surfaces, followed by: (a) attachment of 3,4-(vinylenedioxy)thiophene (VDOT: an analogue to EDOT susceptible to radical addition through its vinylenedioxy group); and, (b) oxidative (with FeCl3) co-polymerization of surface-confined VDOT with 3,4-ethylenedioxythiophene (EDOT). In conjunction with classical photolithography, the method yields thin (â¼150 nm) yet dense, pinhole-free (confirmed electrochemically), hard (>6H), extremely adhesive (5B), patterned, highly conducting (52 mho cmâ1) films. The process is applied mainly on glass but it works equally well on oxidized metal surfaces (aluminum, steel, Pt). Control studies related to âgrafting fromâ with surface-confined AIBN were conducted by growing inexpensive poly(styrene) and poly(methylmethacrylate) films.
聚(3,4-亚乙二
氧基
噻吩)(P
EDOT)薄膜可用作塑料和
玻璃等电绝缘基材上的抗静电涂层。在绝缘体上合成导电 P
EDOT 薄膜的新方法是通过溶胶
化学将二
硅(OEt)3 官能化自由基
引发剂(AIBN)附着在
氧化表面上,然后进行以下步骤:(a) 附着 3,4-(
乙烯二
氧基)
噻吩(VDOT:
EDOT 的类似物,可通过其
乙烯二
氧基基团进行自由基加成);以及 (b) 表面封闭的 VDOT 与 3,4-
乙烯二
氧基
噻吩(
EDOT)发生
氧化(使用 FeCl3)共聚。该方法与传统的光刻技术相结合,可获得薄(150 nm)但致密、无针孔(电
化学证实)、坚硬(>6H)、粘
合力极强(5B)、图案化、高导电性(52 mho cmâ1)的薄膜。该工艺主要应用于
玻璃,但在
氧化金属表面(
铝、钢、
铂)上也同样有效。通过生长廉价的聚(
苯乙烯)和聚(
甲基丙烯酸甲酯)薄膜,进行了与表面封闭的 AIBN "接枝 "有关的控制研究。