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2,3,9,10-tetrachloropentacene | 606927-22-4

中文名称
——
中文别名
——
英文名称
2,3,9,10-tetrachloropentacene
英文别名
——
2,3,9,10-tetrachloropentacene化学式
CAS
606927-22-4
化学式
C22H10Cl4
mdl
——
分子量
416.133
InChiKey
XJEVSCXXKBCJIB-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    9.2
  • 重原子数:
    26
  • 可旋转键数:
    0
  • 环数:
    5.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

反应信息

  • 作为产物:
    描述:
    4,5-二氯苯二甲酸四氯化碳 sodium hydroxide草酰氯硼烷二甲基亚砜三乙胺氢化铝 、 mercury dichloride 、 环己醇 作用下, 以 四氢呋喃乙醇二氯甲烷 为溶剂, 反应 72.0h, 生成 2,3,9,10-tetrachloropentacene
    参考文献:
    名称:
    A One-Step Synthesis of a Poly(iptycene) through an Unusual Diels−Alder Cyclization/Dechlorination of Tetrachloropentacene
    摘要:
    We have discovered the first reaction of a substituted pentacene molecule as a dienophile. A surprisingly clean Diels-Alder self-coupling of Cl4Pn leads to a novel ladder polymer, poly(iptycene), which can be converted to a conducting carbon at relatively low temperature (600-900 degrees C). Theoretical calculations of the former reaction suggest a biradical asymmetric mechanism, despite highly symmetric reactants.
    DOI:
    10.1021/ja036193i
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文献信息

  • Polyacene Compound And Organic Semiconductor Thin Film
    申请人:Nagata Kazuto
    公开号:US20080061287A1
    公开(公告)日:2008-03-13
    The present invention provides an organic semiconductor material which exhibits a high mobility, and excellent solubility in solvents and oxidation resistance. The present invention also provides an organic semiconductor thin film exhibiting a high mobility, and an organic semiconductor device exhibiting excellent electronic characteristics. A transistor structure is formed by coating the silicon substrate with a thin film of pentacene compound substituted halogens at 6 and 13 positions and aliphatic hydrocarbons at 2, 3, 9 and 10 positions, wherein the substrate is patterned beforehand with gold to have a source and drain electrodes.
    本发明提供了一种有机半导体材料,具有高迁移率、良好的溶解性和抗氧化性。本发明还提供了一种具有高迁移率的有机半导体薄膜和具有优异电子特性的有机半导体器件。晶体管结构通过在基底上涂覆取代卤素的五环化合物薄膜,在2、3、9和10位置涂覆脂肪族烃,其中底板事先用图案制成源和漏极电极。
  • POLYACENE COMPOUND AND ORGANIC SEMICONDUCTOR THIN FILM
    申请人:NAGATA Kazuto
    公开号:US20120108850A1
    公开(公告)日:2012-05-03
    The present invention provides an organic semiconductor material which exhibits a high mobility, and excellent solubility in solvents and oxidation resistance. The present invention also provides an organic semiconductor thin film exhibiting a high mobility, and an organic semiconductor device exhibiting excellent electronic characteristics. A transistor structure is formed by coating the silicon substrate with a thin film of pentacene compound substituted halogens at 6 and 13 positions and aliphatic hydrocarbons at 2, 3, 9 and 10 positions, wherein the substrate is patterned beforehand with gold to have a source and drain electrodes.
    本发明提供了一种有机半导体材料,具有高迁移率、良好的溶解性和氧化抗性。本发明还提供了一种具有高迁移率的有机半导体薄膜和具有优异电子特性的有机半导体器件。通过在衬底上涂覆取代卤素的五环化合物薄膜和2、3、9和10位脂肪族烃的薄膜,形成晶体管结构,其中衬底预先用进行图案处理以具有源和漏极电极。
  • THIN FILM OF CONDENSED POLYCYCLC AROMATIC COMPOUND, AND METHOD FOR PREPARING THIN FILM OF CONDENSED POLYCYCLC AROMATIC COMPOUND
    申请人:Asahi Kasei Kabushiki Kaisha, Ltd.
    公开号:EP1724028A1
    公开(公告)日:2006-11-22
    An organic semiconductor thin film exhibiting high mobility and a method for preparing the same, and a material for preparing the organic semiconductor thin film by a wet process and a method for preparing the same are provided. Further, an organic semiconductor device excellent in electronic characteristics is provided. A mixture of high purity pentacene and 1,2,4-trichlorobenzene was heated to prepare a homogeneous solution, and a silicon substrate having a pattern of a gold electrode as a source/drain electrode formed thereon was heated to 100°C and the resultant pentacene solution was spread on the surface of the substrate. When 1,2,4-trichlorobenzene was evaporated, a pentacene thin film was formed. A transistor was formed with the use of the thin film.
    提供了一种具有高迁移率的有机半导体薄膜及其制备方法,以及一种通过湿法工艺制备该有机半导体薄膜的材料及其制备方法。此外,还提供了一种电子特性优异的有机半导体器件。将高纯度的并五苯和 1,2,4-三氯苯的混合物加热以制备均匀的溶液,然后将衬底加热至 100°C,并在其上形成以电极作为源极/漏极的图案,然后将得到的并五苯溶液涂抹在衬底表面。当 1,2,4-三氯苯蒸发后,就形成了五碳烯薄膜。利用该薄膜形成了一个晶体管。
  • METHOD FOR PREPARING THIN FILM OF CONDENSED POLYCYCLC AROMATIC COMPOUND
    申请人:Asahi Kasei Kabushiki Kaisha
    公开号:EP1724028B1
    公开(公告)日:2012-02-29
  • Condensed polycyclic aromatic compound thin film and method for preparing condensed polycyclic aromatic compound thin film
    申请人:Ohno Eiichi
    公开号:US20070184574A1
    公开(公告)日:2007-08-09
    An organic semiconductor thin film exhibiting high mobility and a method for preparing the same, and a material for preparing the organic semiconductor thin film by a wet process and a method for preparing the same are provided. Further, an organic semiconductor device excellent in electronic characteristics is provided. A mixture of high purity pentacene and 1,2,4-trichlorobenzene was heated to prepare a homogeneous solution, and a silicon substrate having a pattern of a gold electrode as a source/drain electrode formed thereon was heated to 100° C. and the resultant pentacene solution was spread on the surface of the substrate. When 1,2,4-trichlorobenzene was evaporated, a pentacene thin film was formed. A transistor was formed with the use of the thin film.
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同类化合物

并六苯 并五苯 十四氟并五苯 二苯并[去,St]并五苯 二苯并[hi,wx]庚省 二苯并[fg,qr]戊省 二苯并[a,l]并五苯 二苯并[a,c]戊省 7,14-二苯并五苯 6,13-双(三甲硅基乙炔基)并五苯 6,13-双(三异丙基甲硅烷基乙炔基)并五苯 6,13-双(2-噻吩基)并五苯 6,13-二氯并五苯 2,3,9,10-四(4-叔丁基苯基)并五苯 1,4,8,11-戊省四酮,6,13-二己基-2,3,9,10-四甲基- 5-[4-(4,4,5,5-tetramethyl[1,3,2]dioxaborolan-2-yl)phenyl]-14-phenylpentacene 5-(4-decyloxy-phenyl)-14-phenyl-pentacene 1,2,3,4,9,10-Hexaphenyl-anthracene 1,4-bis(trimethylsilyl)-2,3-dimethylnaphthacene 6,6’-bipentacene Tri(propan-2-yl)-[2-[7,14,24,31-tetraphenyl-19-[2-tri(propan-2-yl)silylethynyl]-2-nonacyclo[18.14.0.03,18.05,16.06,15.08,13.022,33.023,32.025,30]tetratriaconta-1,3,5(16),6,8,10,12,14,17,19,21,23,25,27,29,31,33-heptadecaenyl]ethynyl]silane Tri(propan-2-yl)-[2-[7,18,28,39-tetraphenyl-23-[2-tri(propan-2-yl)silylethynyl]-2-undecacyclo[22.18.0.03,22.05,20.06,19.08,17.010,15.026,41.027,40.029,38.031,36]dotetraconta-1,3,5(20),6,8,10,12,14,16,18,21,23,25,27,29,31,33,35,37,39,41-henicosaenyl]ethynyl]silane 6,13-bis(triisobutylsilylethynyl)pentacene 1,4-Bis(2,2-dimethylpropoxy)anthracene 2,3-dibromo-6,13-bis(diphenylmethylene)-9,10-bis(dodecyloxy)-6,13-dihydropentacene dimethyl-2,3 diacetoxy-1,4 naphtacene 2,9-didecylpentacene 2,9-diundecylpentacene 2,9-dioctylpentacene 7-Ethyl-heptaphen 2,9-dibutylpentacene 8,9,10-Trichlorocyclohept-s-indacen 2,9-dipentylpentacene 2,3-bis(hexadecyloxy)-5,12-diphenyltetracene naphthacene; compound with antimony (V)-chloride 6,13-bis[4-(trimethylsilylethynyl)phenyl]pentacene 2,8-di(2-(trimethylsilyl)ethylthio)tetracene 2,8-di(acetylthio)tetracene 6,13-bis(cyclopropyldiisopropylsilylethynyl)pentacene naphthacene-5,6-diol 2-(2-(trimethylsilyl)ethylthio)tetracene 6,7,14,15,22,23-Hexamethoxyanthra<2,3-j>heptaphen 2,9-diheptylpentacene 5,14-diphenyl-7,12-bis(2-(triethylsilyl)ethyl)pentacene 5,8-difluorobenzophenanthrene 6,13-bis((1-methylenepropyl)diisopropylsilylethynyl)pentacene