Synthesis and physical properties of brominated hexacene and hole-transfer properties of thin-film transistors
作者:Motonori Watanabe、Takaaki Miyazaki、Toshinori Matsushima、Junko Matsuda、Ching-Ting Chein、Masahiko Shibahara、Chihaya Adachi、Shih-Sheng Sun、Tahsin J. Chow、Tatsumi Ishihara
DOI:10.1039/c7ra13632c
日期:——
spectra, as well as by DFT computation analysis. It exhibited high stability in the solid state over 3 months, therefore can be utilized in the fabrication of opto-electronic devices. The organic thin-film transistors (OFETs) were fabricated by using 2-bromohexacene and parent hexacene through vaccum deposition method. The best film mobility of 2-bromohexacene was observed at 0.83 cm2 V−1 s−1 with an on/off
合成了卤化物取代的高级并苯、2-溴六苯及其具有羰基桥部分的前体。前体通过 7 个步骤合成,总收率为 2.5%。前体和热转化的 2-溴六苯的结构通过固态 NMR、IR 和吸收光谱以及 DFT 计算分析进行了表征。它在 3 个月内在固态下表现出高稳定性,因此可用于制造光电器件。有机薄膜晶体管 (OFET) 是通过真空沉积法使用 2-溴六苯和母体六苯制造的。2-溴六苯的最佳薄膜迁移率在 0.83 cm 2 V -1 s -1处观察到,开/关比为 5.0 × 10 4和-52 V 的阈值,而在0.076 cm 2 V -1 s -1观察到六苯的最佳薄膜迁移率,开/关比为2.4 × 10 2和-21 V 的阈值。AFM 测量为2 -溴六苯显示出平滑的成膜。2-溴六苯的平均迁移率比未取代的六苯高 8 倍。