摩熵化学
数据库官网
小程序
打开微信扫一扫
首页 分子通 化学资讯 化学百科 反应查询 关于我们
请输入关键词

N-hydroxynaphthalimide methanesulfonate | 83697-53-4

中文名称
——
中文别名
——
英文名称
N-hydroxynaphthalimide methanesulfonate
英文别名
N-methylsulfonyloxy-1,8-naphthalimide;N-methanesulfonyloxy-1,8-naphthalenedicarboximide;2-[(Methylsulfonyl)oxy]-1H-benz[de]isoquinoline-1,3(2H)-dione;(1,3-dioxobenzo[de]isoquinolin-2-yl) methanesulfonate
N-hydroxynaphthalimide methanesulfonate化学式
CAS
83697-53-4
化学式
C13H9NO5S
mdl
——
分子量
291.284
InChiKey
HIJHCNVWGVUYBO-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.8
  • 重原子数:
    20
  • 可旋转键数:
    2
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.08
  • 拓扑面积:
    89.1
  • 氢给体数:
    0
  • 氢受体数:
    5

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    描述:
    甲烷磺酸N-羟基-1,8-萘二甲酰亚胺钠二甲醇缩甲醛 为溶剂, 反应 1.32h, 以67%的产率得到N-hydroxynaphthalimide methanesulfonate
    参考文献:
    名称:
    Photogenerated reagents
    摘要:
    这项发明描述了试剂前体和化学以及生物化学反应的方法。这些试剂前体可以在溶液中被激发后激活,产生后续化学反应所需的试剂。具体来说,光生试剂(PGR)对于控制并行组合合成和各种化学以及生物化学反应非常有用。
    公开号:
    US06965040B1
点击查看最新优质反应信息

文献信息

  • Process for the preparation of substituted phenols
    申请人:Daicel Chemical Industries, Ltd.
    公开号:EP1967505A1
    公开(公告)日:2008-09-10
    A substituted phenolic compound is prepared by oxidizing a substituted diarylethane compound with oxygen in the presence of a nitrogen-containing cyclic compound, and treating the oxidized product with an acid. The nitrogen-containing cyclic compound includes, as a constituent of its ring, a skeleton represented by following Formula (I): wherein X is oxygen atom or an -OR group, where R is hydrogen atom or a hydroxyl-protecting group. The substituted diarylethane compound is represented by following Formula (1): wherein each of Ring Ar1 and Ring Ar2 is independently a monocyclic or polycyclic aromatic carbocyclic ring; Y1 is an electron-donating group; Y2 is an electron-withdrawing group; "p" is an integer of 1 or more; and "q" is an integer of 0 or more. The substituted phenolic compound is represented by following Formula (2): wherein Ring Ar1, Y1, and "p" are as defined above.
    一种取代酚化合物是通过在含氮环化合物存在下氧化取代二芳乙烷化合物制备的,并且用酸处理氧化产物。含氮环化合物包括其环中的一个组分是由以下式(I)表示的骨架:其中X是氧原子或-OR基团,其中R是氢原子或羟基保护基团。取代二芳乙烷化合物由以下式(1)表示:其中Ar1环和Ar2环中的每一个独立地是单环或多环芳香碳环;Y1是电子给予基团;Y2是电子吸引基团;“p”是1或更多的整数;“q”是0或更多的整数。取代酚化合物由以下式(2)表示:其中Ar1环,Y1和“p”如上定义。
  • METHOD FOR PRODUCING OXIDE
    申请人:DAICEL CORPORATION
    公开号:US20160159722A1
    公开(公告)日:2016-06-09
    Provided is a method of oxidizing a substrate with excellent oxidizing power to yield a corresponding oxide. The method can employ a commercially available imide compound as intact as a catalyst and can produce the oxide in a high yield under mild conditions. A method for producing an oxide according to the present invention includes performing oxidation of a substrate in the presence of oxygen and ozone under catalysis of an imide compound to yield a corresponding oxide. The imide compound has a cyclic imide skeleton represented by Formula (I). In the formula, n is selected from 0 and 1; and X is selected from an oxygen atom and an —OR group, where R is selected from hydrogen and a hydroxy-protecting group.
    提供了一种氧化底物以产生相应氧化物的方法,该方法可以利用商业可获得的亚酰胺化合物作为催化剂,并在温和条件下高产率地产生氧化物。根据本发明的一种制备氧化物的方法包括在氧气和臭氧的存在下,在亚酰胺化合物的催化下对底物进行氧化,以产生相应的氧化物。该亚酰胺化合物具有由式(I)表示的环状亚酰胺骨架。在该式中,n选择自0和1;X选择自氧原子和—OR基团,其中R选择自氢和羟基保护基团。
  • Process for producing azine compounds and oxime compounds
    申请人:——
    公开号:US20030204084A1
    公开(公告)日:2003-10-30
    A process comprising allowing a peroxide compound represented by following Formula (2): 1 wherein R a , R b , R c and R d are the same or different and are each a hydrogen atom or a hydrocarbon group, and wherein R a and R b , R c and R d may be combined to form a ring together with the adjacent carbon atom, respectively, to react with ammonia and water to yield an azine compound represented by following Formula (3): 2 wherein R a , R b , R c and R d have the same meanings as defined above, or oxime compounds represented by following Formulae (4 a ) and/or (4 b ): 3 wherein R a , R b , R c and R d have the same meanings as defined above, in the presence of a nitrogen-containing cyclic compound constitutively having a skeleton represented by following Formula (A) in its ring: 4 wherein X is one of an oxygen atom and an —OR group, and wherein R is one of a hydrogen atom and a hydroxyl-protecting group. This process can produce an oxime compound or an azine compound useful as a material for oxime compounds from low-cost materials by easy and simple procedures.
    一种过程包括允许由以下式(2)表示的过氧化物化合物:其中Ra、Rb、Rc和Rd相同或不同,每个都是氢原子或烃基,且Ra和Rb、Rc和Rd可以分别与相邻的碳原子结合形成环,以与氨和水反应生成由以下式(3)表示的偶氮化合物:其中Ra、Rb、Rc和Rd的含义与上述定义相同,或者在具有以下式(A)中的环中具有骨架的含氮环化合物的存在下生成由以下式(4a)和/或(4b)表示的肟化合物:其中Ra、Rb、Rc和Rd的含义与上述定义相同,在X为氧原子和-OR基团之一,R为氢原子和羟基保护基团之一的情况下。该过程可以通过简单易行的步骤从低成本材料中产生用作肟化合物材料的肟化合物或偶氮化合物。
  • FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US20210165327A1
    公开(公告)日:2021-06-03
    An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. The problem described above can be solved by the following film forming material for lithography. A film forming material for lithography comprising: a compound having a group of formula (0A): (In formula (0A), R A is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R B is an alkyl group having 1 to 4 carbon atoms.); and a compound having a group of formula (0B):
    本发明的目的是提供一种适用于湿法的光刻膜材料,用于形成具有良好耐热性、耐蚀性、嵌入性和膜平整度的光刻胶底层膜,以及支撑材料之间高度差异的问题。以上所述的问题可以通过以下的光刻膜材料来解决。一种光刻膜材料,包括:具有公式(0A)组的化合物:(在公式(0A)中,RA是氢原子或具有1至4个碳原子的烷基;RB是具有1至4个碳原子的烷基。);以及具有公式(0B)组的化合物:
  • Orthogonal Procesing of Organic Materials Used in Electronic and Electrical Devices
    申请人:Ober Christopher K.
    公开号:US20110159252A1
    公开(公告)日:2011-06-30
    An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO 2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.
    本文介绍了一种用于光刻有机结构的正交工艺。该工艺利用氟化溶剂或超临界CO2作为溶剂,以使有机导体和半导体的性能不受其他侵蚀性溶剂的不利影响。其中一种方法还可以使用氟化光阻与HFE溶剂结合使用,但也可以使用其他氟化溶剂。在一种实施例中,氟化光阻是一种二苯并呋喃酮,但也可以使用各种氟化聚合物光阻和氟化分子玻璃光阻。例如,一种共聚物全氟癸基甲基丙烯酸酯(FDMA)和2-硝基苯甲酸甲酯(NBMA)是用于与氟化溶剂和超临界二氧化碳在光刻工艺中使用的适用于正交的氟化光阻。氟化光阻和氟化溶剂的组合提供了一种强大的正交工艺,这种工艺尚未被已知的方法或设备实现。
查看更多