isopropylindiumdiiodide | 129973-92-8

• 分子结构分类: 有机化合物 - 有机金属化合物
• 英文名称: isopropylindiumdiiodide
• 英文别名: Diiodo(propan-2-yl)indigane
• CAS: 129973-92-8
• 化学式: C₃H₇I₂In
• 分子量: 411.718
• InChiKey: CTZWAKBFYOBWKQ-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
  2.75
• 重原子数：
  6
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  isopropylindiumdiiodide 、 以 四氢呋喃 为溶剂， 以39%的产率得到1-{(Me)2CH}-1-In-2,3-(SiMe3)2-2,3-C2B4H4
  参考文献：
  名称：

  Hosmane, Narayan S.; Lu, Kai-Juan; Saxena, Anil K., Organometallics, 1994, vol. 13, # 3, p. 979 - 988

  摘要：

  DOI：
• 作为产物：
  描述：

  碘化铟 、 triisopropyl indium 以 乙醚 为溶剂， 以98%的产率得到isopropylindiumdiiodide
  参考文献：
  名称：

  Zur kenntnis von i Pr 2 InBr，i Pr 2 InI和i PrInI 2

  摘要：

  据报道，方便的合成路线是三异丙基茚满，双异丙基溴化铟和碘化物以及异丙基铟二碘化物。研究了异丙基二碘化物对硫属元素醇（C 2 H 5 EH; E = S，Se）的反应活性。描述了新化合物的光谱以及一些物理和化学性质。

  DOI：

  10.1016/0022-328x(90)80149-t

文献信息

• Dimeric gallium and indium dialkylphosphido complexes with unusual Group 13-15 stoichiometries
  作者：David A. Atwood、Vicki O. Atwood、Alan H. Cowley、Hala R. Gobran、Richard A. Jones、Tina M. Smeal、Carl J. Carrano

  DOI：10.1021/om00033a024

  日期：1993.9

  Three group 13 dialkylphosphido complexes have been prepared with group 13-15 stoichiometries of 1:2, [t-Bu(i-Pr2P)Ga(A-P-i-Pr2)]2 (1) and [i-Pr(i-Pr2P)In(mu-P-i-Pr2)]2 (2), and 2:3, [t-Bu(i-Pr2P)Ga(mu-P-i-Pr2)2Ga(Cl)t-Bu] (3). These complexes were prepared in moderate yields via the reaction of the appropriate lithium dialkylphosphide and alkyl group 13 halide in the desired stoichiometric ratio. Each compound has been characterized by elemental analysis, H-1 and P-31 NMR, and mass spectroscopy. The structures of 2 and 3 were established by X-ray crystallography. Crystal data for 2: space group P2(1)/c, a = 11.283(1) angstrom, b = 11.429(5) angstrom, c = 15.836(3) angstrom, beta = 104.19(1)-degrees, V = 1980(6) angstrom3, Z = 4, R = 0.0401. Crystal data for 3: space group P2(1)/c, a = 18.453(4) angstrom, b = 9.516(2) angstrom, c = 20.745(4) angstrom, beta = 106.88(3)-degrees, V = 3486(2) angstrom3, z = 8, R = 0.0551. Both compounds feature structures with four-membered M2P2 rings.
• Hosmane, Narayan S.; Saxena, Anil K.; Lu, Kai-Juan, Organometallics, 1995, vol. 14, # 11, p. 5104 - 5118
  作者：Hosmane, Narayan S.、Saxena, Anil K.、Lu, Kai-Juan、Maguire, John A.、Zhang, Hongming、Wang, Ying、Thomas, Colacot J.、Zhu, Dunming、Grover, Bobby R.、Gray, Thomas G.、Eintracht, Jason F.、Isom, Harold、Cowley, Alan H.

  DOI：——

  日期：——
• Synthesis and crystal structure of a closo-indacarborane dimer
  作者：Narayan S. Hosmane、Kai Juan Lu、Hongming Zhang、Alan H. Cowley、Miguel A. Mardones

  DOI：10.1021/om00048a011

  日期：1991.2

  Interaction of the Na+(THF)Li+[2,3-(SiMe3)2C2B4H4]2- double salt with (Me)2CHInI2 in a molar ratio of 1:1 in dry THF produced the closo-indacarborane 1-[(Me)2CH]-1-InIII-2,3-(SiMe3)2-2,3-C2B4H4 (1) as a white, air-sensitive, and low-melting crystalline solid in 39% yield. Complex 1 was characterized by H-1, B-11, and C-13 NMR spectra, by mass and IR spectra, and also by X-ray crystallography. The crystal structure of 1 reveals that the indacarborane is a dimeric cluster with intercluster indium-boron distances in the range 2.847 (5)-3.248 (6) angstrom and an indium-indium contact of 3.696 (1) angstrom. The indium metal in each cage occupies an apical vertex of a pentagonal bipyramid and is slipped significantly toward the unique boron above the C2B3 face in an eta-3 fashion. The angles of tilt in the In-bound isopropyl group from the axis that bisects the C2B3 centroid and the apical indium and from the axis that bisects the apical boron and the apical indium are in the range of 36.7-45.1-degrees.
• An indium-phosphorus heterocubane as a new type of indium phosphide precursor
  作者：David A. Atwood、Alan H. Cowley、Richard A. Jones、Miguel A. Mardones

  DOI：10.1016/0022-328x(93)80126-v

  日期：1993.5

  The first indium-phosphorus cubane, ([PrIn(mu3-PSiPh3)]4)-Pr-i (1) has been prepared via the reaction of Li2[PSiPh3] with (PrInI2)-Pr-i. The structure of 1 has been determined by X-ray analysis: monoclinic, space group P2(1)/c with a = 15.611(3), b = 25.767(2), c 22.541(6) angstrom, beta = 96.19(2)-degrees, and Z = 4. Polycrystalline films of indium phosphide have been grown on Si(100) wafers from 1 in a horizontal hot-wall reactor at 500-degrees-C. Compound 1 is unstable with respect to photolysis and electrochemical oxidation; however it is relatively stable toward alcoholysis.