R2Ga–C(SiMe3)=C(H)–NR'2 (7). The Ga and N atoms adopt cis‐positions at the C=C bonds and show weak Ga–N interactions. tBu2GaH and Me3Si–C≡C–N(C2H4)2NMe afforded under exposure of daylight the trifunctional digallium(II) compound [MeN(C2H4)2N](H)C=C(SiMe3)Ga(tBu)–Ga(tBu)C(SiMe3)=C(H)[N(C2H4)2NMe] (8), which results from elimination of isobutene and H2 and Ga–Ga bond formation. 8 was selectively obtained from the ynamine
我的Hydrogallation 3的Si-C≡C-NR” 2,其中R 2 Ga的H(R =吨卜,CH 2吨卜,我卜),得到N基的Ga /活性的路易斯对,R 2 Ga的C(森3)= C(H)-NR” 2(7)。Ga和N原子在C = C键处采用顺位,并且显示出弱的Ga-N相互作用。t Bu 2 GaH和Me 3 Si–C≡C–N(C 2 H 4)2 NMe在日光下暴露,得到三官能二
镓(II)化合物[MeN(C 2 H 4)2 N](H)C = C(SiMe 3)Ga(t Bu)–Ga(t Bu)C(SiMe 3)= C(H)[N(C 2 H 4)2 NMe](8),这是由于消除了
异丁烯和H 2以及Ga-Ga键的形成。从
乙胺和[ t Bu(H)Ga-Ga(H)t Bu] 2 [
HGa t Bu 2 ] 2选择性地获得8。图7a(R =吨卜; NR” 2 = 2,6-ME 2 NC 5 ħ 8)和H