Formation and laser-induced-fluorescence study of SiO+ ions produced by laser ablation of Si in oxygen gas
作者:Yukari Matsuo、Takashi Nakajima、Tohru Kobayashi、Michio Takami
DOI:10.1063/1.119750
日期:1997.8.25
We have studied laser-induced-fluorescence (LIF) spectra of SiO+ produced by laser ablation of a Si wafer in oxygen ambient gas. Emission from neutral and ionic species of Si atoms and SiO molecules is also studied in the laser-induced plasma plume. The optimum oxygen pressure for the formation of molecular ions is found to be ∼120 mTorr. The rotational temperature of SiO+ ions shows rapid thermalization
我们研究了在氧气环境气体中激光烧蚀 Si 晶片产生的 SiO+ 的激光诱导荧光 (LIF) 光谱。在激光诱导的等离子体羽流中还研究了中性和离子种类的 Si 原子和 SiO 分子的发射。发现分子离子形成的最佳氧压为~120 mTorr。SiO+ 离子的旋转温度显示出在 20 μs 内向室温快速热化。