2,2-dimethylacenaphthylen-1(2H)-one | 18086-43-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 2,2-dimethylacenaphthylen-1(2H)-one
• 英文别名: 2,2-dimethyl-1-acenaphthenone；2,2-dimethylacenaphthen-1-one；2,2-dimethylacenaphthenone；2,2-Dimethyl-acenaphthen-1-on；2,2-Dimethyl-1-acenaphthenon；2,2-dimethylacenaphthylen-1-one
• CAS: 18086-43-6
• 化学式: C₁₄H₁₂O
• 分子量: 196.249
• InChiKey: AJSKKIXSJRIRBO-UHFFFAOYSA-N

物化性质

• 沸点：
  332.9±22.0 °C(Predicted)
• 密度：
  1.155±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  15
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.21
• 拓扑面积：
  17.1
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  2,2-dimethylacenaphthylen-1(2H)-one 在 苦味酸 作用下， 以 乙醚 、 苯 为溶剂， 生成 1-methylene-2,2-dimethylacenaphthene
  参考文献：
  名称：

  The preparation of C-1 and C-2 methylated acenaphthenes

  摘要：

  1-甲基-、1,1-二甲基-、顺式(?)-1,2-二甲基-、1,1,2-三甲基-和1,1,2,2-四甲基-蒽醌的合成已经通过标准反应从两个化合物1-蒽酮和2-甲基-1-蒽酮完成。这两种酮又是从1-萘乙酸获得的。

  DOI：

  10.1139/v68-121
• 作为产物：
  描述：

  2,2-Dimethyl-1-acenaphthenol 在 4-二甲氨基吡啶 、 N,N'-二环己基碳二亚胺 作用下， 以 乙酸乙酯 为溶剂， 25.0~760.0 ℃ 、2.67 Pa 条件下， 反应 16.0h， 生成 2,2-dimethylacenaphthylen-1(2H)-one
  参考文献：
  名称：

  Brown, Roger F.C.; Eastwood, Frank W.; Wong, Neil R., Australian Journal of Chemistry, 1996, vol. 49, # 7, p. 793 - 800

  摘要：

  DOI：

文献信息

• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20170073288A1

  公开（公告）日：2017-03-16

  The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

  根据本发明，该化合物由特定的公式表示。根据本发明，该化合物具有特定公式的结构，因此可应用于湿法工艺，具有优异的耐热性和耐蚀性。此外，根据本发明，该化合物具有特定结构，因此具有高耐热性、相对较高的碳浓度、相对较低的氧浓度以及高溶剂溶解性。因此，根据本发明的化合物可用于形成在高温烘烤时降解受抑制且在氧等离子体蚀刻中具有优异耐蚀性的底层膜。此外，该化合物在与光阻层的粘附性方面也表现出色，因此可形成优异的光阻图案。
• Enantioselective Synthesis of Indanes with a Quaternary Stereocenter via Diastereoselective C(sp³)–H Functionalization
  作者：Jun Chen、Zhan Shi、Ping Lu

  DOI：10.1021/acs.orglett.1c02513

  日期：2021.10.1

  A practical synthesis of enantioenriched indane derivatives with quaternary stereocenters was developed via sequential enantioselective reduction and C–H functionalization. Good to excellent enantioselectivity could be achieved by either the CuH-catalyzed asymmetric reduction or the Corey–Bakshi–Shibata (CBS) reduction of indanone derivatives. The subsequent diastereospecific and regioselective rhodium-catalyzed

  通过顺序对映选择性还原和 C-H 功能化开发了具有四元立体中心的对映体富集茚满衍生物的实用合成。通过CuH催化的不对称还原或茚满酮衍生物的Corey-Bakshi-Shibata（CBS）还原可以实现良好的对映选择性。随后的非对映特异性和区域选择性铑催化的甲基 C-H 键甲硅烷基化导致具有四元中心的茚满衍生物。该策略进一步应用于（nor）伊卢达烷和葡萄烷倍半萜类化合物的合成。
• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, CIRCUIT PATTERN FORMING METHOD, AND PURIFICATION METHOD OF COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20180029968A1

  公开（公告）日：2018-02-01

  A compound represented by the following formula (1). (in formula (1), R 1 represents a 2n-valent group having 1 to 30 carbon atoms, R 2 to R 5 each independently represent an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, provided that at least one R 4 and/or at least one R 5 represents an alkoxy group having 1 to 30 carbon atoms, m 2 and m 3 are each independently an integer of 0 to 8, m 4 and m 5 are each independently an integer of 0 to 9, provided that m 4 and m 5 are not 0 at the same time, n is an integer of 1 to 4, and p 2 to p 5 are each independently an integer of 0 to 2.)

  公式（1）代表的化合物。（在公式（1）中，R1代表具有1至30个碳原子的2n价基团，R2至R5分别独立代表具有1至10个碳原子的烷基基团，具有6至10个碳原子的芳基基团，具有2至10个碳原子的烯烃基团，具有1至30个碳原子的烷氧基团，硫醇基团或羟基团，前提是至少一个R4和/或至少一个R5代表具有1至30个碳原子的烷氧基团，m2和m3分别独立地是0至8的整数，m4和m5分别独立地是0至9的整数，前提是m4和m5不同时为0，n是1至4的整数，p2至p5分别独立地是0至2的整数。）
• COMPOUND FOR FORMING ORGANIC FILM, COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184968A1

  公开（公告）日：2017-06-29

  A compound for forming an organic film shown by the formula (1A), R—(—X) m1 (1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and ml represents an integer satisfying 2≦m1≦10, wherein X 2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X 3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R 10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.

  一种用于形成有机薄膜的化合物，其化学式为(1A)，R—(—X)m1(1A)，其中R代表一个单键或具有1至50个碳原子的有机基团；X代表化学式(1B)所示的基团；m1代表满足2≦m1≦10的整数，其中X2代表具有1至10个碳原子的二价有机基团；n1代表0或1；n2代表1或2；X3代表化学式(1C)所示的基团；n5代表0、1或2，其中R10代表氢原子或具有1至10个碳原子的饱和或不饱和碳氢基团，化学式(1C)中苯环的氢原子可能被甲基基团或甲氧基取代。这种用于形成有机薄膜的化合物可以提供具有良好干法刻蚀抗性、耐高温至400°C或更高、高填充和平整化性能的有机薄膜组合物。