Dibenzo[b,d]thiophene based oligomers with carbon–carbon unsaturated bonds for high performance field-effect transistors
作者:Chengliang Wang、Zhongming Wei、Qing Meng、Huaping Zhao、Wei Xu、Hongxiang Li、Wenping Hu
DOI:10.1016/j.orgel.2009.12.011
日期:2010.4
Thin film transistors of these compounds displayed typical p-type behaviour. The best performance was obtained from 3,7-distyryldibenzo[b,d]thiophene (DSDBT) on OTS modified substrates with mobility as high as 0.15 cm2/Vs and on/off current ratio up to 108, one of the highest performance for DBT based oligomers.
合成了具有碳-碳双键和三键的基于二苯并[b,d]噻吩(DBT)的低聚物。通过热分析,紫外可见吸收光谱和电化学研究了它们的热稳定性和能级。3,7-双(苯基乙炔基)二苯并[b,d]噻吩(BEDBT)单晶显示不饱和键的引入消除了相邻芳环之间的空间排斥,BEDBT在晶体中显示出平面结构。这些化合物的薄膜晶体管表现出典型的p型行为。在OTS改性的,迁移率高达0.15 cm 2的基材上,由3,7-二苯乙烯基二苯并[b,d]噻吩(DSDBT)获得了最佳性能/ Vs和开/关电流比高达10 8,这是基于DBT的低聚物的最高性能之一。