Novel Electron Acceptors Bearing a Heteroquinonoid System. 4. Syntheses, Properties, and Charge-Transfer Complexes of 2,7-Bis(dicyanomethylene)-2,7-dihydrobenzo[2,1-b:3,4-b']dithiophene, 2,7-Bis(dicyanomethylene)-2,7-dihydrobenzo[1,2-b:4,3-b']dithiophene, and 2,6-Bis(dicyanomethylene)-2,6-dihydrobenzo[1,2-b:4,5-b']dithiophene
作者:Shu Yoshida、Masanori Fujii、Yoshio Aso、Tetsuo Otsubo、Fumio Ogura
DOI:10.1021/jo00090a027
日期:1994.6
The three title compounds were prepared as novel hetero-TCNQ electron accepters comprising the quinonoid skeletons of different benzodithiophene types between two dicyanomethylene groups. On the basis of cyclic voltammetry, they have electron affinities comparable to or stronger than that of TCNQ. In addition, the extensive building blocks serve to induce the effective reduction of on-site coulombic repulsion. They thus behaved as superior electron accepters for forming electrically conductive charge-transfer complexes. In particular, 2,7-bis(dicyanomethylene)-2,7-dihydrobenzo-[2,1-b:3,4-b']dithiophene was the most tractable in terms of stability and solubility, giving a variety of conductive complexes with typical electron donors of TTT, TTF,and TPBP types. Most of these complexes showed a characteristic broad electronic transition in the infrared region of 2.9-4.0 kcm(-1), supporting the idea that their crystal structures assume a stacking form of segregated donor and acceptor columns with mixed valence states.
Alkylated 2,6-Bis(dicyanomethylene)-2,6-dihydrobenzo[1,2-<i>b</i>:4,5-<i>b</i>′]dithiophenes: New Soluble n-Channel Organic Semiconductors for Air-stable OFETs
作者:Tomoya Kashiki、Eigo Miyazaki、Kazuo Takimiya
DOI:10.1246/cl.2009.568
日期:2009.6.5
New solution-prosessable n-channel organic semiconductors were developed based on a 2,6-bis(dicyanomethylene)-2,6-dihydrobenzo[1,2-b:4,5-b′]dithiophene core. The OFETs showed n-channel transistor characteristics under ambient conditions with electron field-effect mobility up to 6.3×10−3 cm2 V−1 s−1.
基于2,6-双(二氰基亚甲基)-2,6-二氢苯并[1,2-b:4,5-b′]二噻吩核,开发了新的可加工n沟道有机半导体。在环境条件下,OFET表现出n沟道晶体管特性,电子场效应迁移率高达6.3×10−3 cm2 V−1 s−1。