butyl-tripropyl-ammonium; hydroxide | 63982-54-7

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: butyl-tripropyl-ammonium; hydroxide
• 英文别名: Butyl-tripropyl-ammonium; Hydroxid；Ammonium, butyltripropyl-, hydroxide；butyl(tripropyl)azanium;hydroxide
• CAS: 63982-54-7
• 化学式: C₁₃H₃₀N*HO
• 分子量: 217.395
• InChiKey: OOXOYCKYWLCWLT-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  3.66
• 重原子数：
  15
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  1
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  butyl-tripropyl-ammonium; hydroxide 生成 丁烯 、 三聚丙烯
  参考文献：
  名称：

  The Competitive Formation of Different Olefins from Quaternary Amines

  摘要：

  DOI：

  10.1021/ja01122a067

文献信息

• AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
  申请人：JSR Corporation

  公开号：EP2131389A1

  公开（公告）日：2009-12-09

  A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M- represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.

  一种化学机械抛光水分散液包括：(A) 胶体二氧化硅，其平均粒径根据 BET 法测定的比表面积计算为 10 至 60 纳米；(B) 有机酸，其一个分子中含有两个或两个以上的羧基和一个或一个以上的羟基；(C) 季铵化合物，其通式如下(1)、 其中 R1 至 R4 分别代表烃基，M- 代表阴离子，化学机械抛光水分散液的 pH 值为 3 至 5。
• Cleaning agent for a semi-conductor substrate
  申请人：WAKO PURE CHEMICAL INDUSTRIES, LTD.

  公开号：US20020016272A1

  公开（公告）日：2002-02-07

  This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.

  本发明涉及一种用于半导体衬底，特别是表面有铜线的衬底的清洗剂，包括一种非离子表面活性剂和一种清洗方法。 上述清洗剂和方法可以控制对氧化硅的蚀刻速度，从而去除吸附在表面有铜线的半导体基板表面的铜线和氧化硅上的杂质，如铜氧化物和颗粒，而不会造成铜线的腐蚀或氧化，也不会造成表面粗糙。
• FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
  申请人：Hamada Yoshitaka

  公开号：US20080290521A1

  公开（公告）日：2008-11-27

  In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR 1 ) 4 or R 2 n Si(OR 3 ) 4-n wherein R 1 s, R 2 (s) and R 3 (s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C 1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.
• AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
  申请人：Matsumoto Taichi

  公开号：US20100099260A1

  公开（公告）日：2010-04-22

  A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R 1 to R 4 individually represent hydrocarbon groups, and M − represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.
• US6310019B1
  申请人：——

  公开号：US6310019B1

  公开（公告）日：2001-10-30