申请人:JSR Corporation
公开号:EP1088868A2
公开(公告)日:2001-04-04
A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like.
The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR1)4-a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R1 represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR2)4 (wherein R2 represents a monovalent organic group), and compounds (3) represented by R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [wherein R3 to R6 may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R7 represents oxygen, phenylene, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6; and d is 0 or 1]; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of a metal chelate compound catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).
一种用于成膜的聚有机硅氧烷基组合物,可生成具有低介电常数和高弹性模量的薄膜,可用作半导体器件等的层间绝缘膜。
成膜组合物包括(A) 通过在碱催化剂存在下水解和缩合得到的水解和缩合产物,该产物至少有一个成员选 自由 RaSi(OR1)4-a(其中 R 代表氢、氟或一价有机基团;R1 代表一价有机基团;且 a 是 1 或 2 的整数)、由 Si(OR2)4(其中 R2 代表一价有机基团)代表的化合物 (2) 以及由 R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c 代表的化合物 (3) [其中 R3 至 R6 可以相同或不同,且各自代表一价有机基团;b和c可以相同或不同,且各自为0至2的整数;R7代表氧、亚苯基或由-(CH2)n-代表的基团,其中n为1至6的整数;d为0或1];以及 (B) 在金属螯合物催化剂存在下,通过水解和缩合得到的至少一种水解和缩合产物,该产物选自由化合物(1)、(2)和(3)组成的组。