4,5-dihydroxy-[1]naphthaldehyde

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 4,5-dihydroxy-[1]naphthaldehyde
• 英文别名: 4,5-Dihydroxy-[1]naphthaldehyd；4,5-Dihydroxynaphthalene-1-carbaldehyde
• 化学式: C₁₁H₈O₃
• 分子量: 188.183
• InChiKey: BEODEHGKDXNNAP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.5
• 重原子数：
  14
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  57.5
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  4,5-dihydroxy-[1]naphthaldehyde 在 alkali 作用下， 生成 4,5-dihydroxy-[1]naphthoic acid
  参考文献：
  名称：

  The Structure of Terramycin^1,2

  摘要：

  DOI：

  10.1021/ja01118a001
• 作为产物：
  描述：

  1,8-二羟基萘 在 乙醚 、 氢氰酸 、 zinc(II) chloride 作用下， 生成 4,5-dihydroxy-[1]naphthaldehyde 、 alkaline earth salt of/the/ methylsulfuric acid
  参考文献：
  名称：

  Morgan; Vining, Journal of the Chemical Society, 1921, vol. 119, p. 181

  摘要：

  DOI：

文献信息

• Resist underlayer film composition and patterning process using the same
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2476713A1

  公开（公告）日：2012-07-18

  There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.

  本发明公开了一种抗蚀剂底层薄膜组合物，其中该组合物含有至少由以下通式（1-1）和/或（1-2）表示的一种或多种化合物和以下通式（2-1）和/或（2-2）表示的一种或多种化合物和/或其等效体缩合而得的聚合物。可以提供一种底层膜组合物，特别是用于三层抗蚀工艺的底层膜组合物，该组合物可以形成反射率降低的底层膜（即作为抗反射膜具有最佳 n 值和 k 值的底层膜）、填充性能优异、图案抗弯曲性能高、蚀刻后尤其是在厚度小于 60 nm 的高纵横向线上不会出现掉线或晃动的底层膜，以及使用该底层膜组合物的图案化工艺。
• Heller; Kretzschmann, Chemische Berichte, 1921, vol. 54, p. 1105
  作者：Heller、Kretzschmann

  DOI：——

  日期：——
• Method of preventing polymer-scale formation
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP0320227B1

  公开（公告）日：1994-09-07
• RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME
  申请人：OGIHARA Tsutomu

  公开号：US20120184103A1

  公开（公告）日：2012-07-19

  There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
• US4933399A
  申请人：——

  公开号：US4933399A

  公开（公告）日：1990-06-12