METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER
申请人:Asakawa Koji
公开号:US20070138139A1
公开(公告)日:2007-06-21
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):
(in the general formula (1), R
1
is a hydrogen atom or methyl group; R
3
is a cyclic group selected from an alicyclic group and an aromatic group; R
4
is a polar group; R
2
is a group represented by the following general formula (2); and j is 0 or 1):
(in the general formula (2), R
5
is a hydrogen atom or methyl group).