The invention relates to new conjugated mono-, oligo- and polydithienopyridines, their use as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors, electroluminescent, photovoltaics, sensors and electrophotographic recording devices, and to a field effect transistor as a component of integrated circuitry, as a thin fim transistor in flat panel display applications or for RFID tags, or a semiconducting component in organic light-emitting diode applications, comprising the new mono-, oligo and polydithienopyridines.
Mono-, oligo- and polydithienopyridines and their use as charge transport materials
申请人:MERCK PATENT GmbH
公开号:EP1275652A3
公开(公告)日:2003-05-02
The invention relates to new conjugated mono-, oligo- and polydithienopyridines, their use as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors, electroluminescent, photovoltaics, sensors and electrophotographic recording devices, and to a field effect transistor as a component of integrated circuitry, as a thin fim transistor in flat panel display applications or for RFID tags, or a semiconducting component in organic light emitting diode applications, comprising the new mono-, oligo and polydithienopyridines.
The invention relates to new conjugated mono-, oligo- and polydithienopyridines, their use as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors, electroluminescent, photovoltaics, sensors and electrophotographic recording devices, and to a field effect transistor as a component of integrated circuitry, as a thin fim transistor in flat panel display applications or for RFID tags, or a semiconducting component in organic light-emitting diode applications, comprising the new mono-, oligo and polydithienopyridines.