tetra-N-isopropyl-propanediyldiamine

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: tetra-N-isopropyl-propanediyldiamine
• 英文别名: Tetra-N-isopropyl-propandiyldiamin；N,N,N',N'-tetra(propan-2-yl)propane-1,3-diamine
• 化学式: C₁₅H₃₄N₂
• 分子量: 242.448
• InChiKey: OROFXWIKMNHVSV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  17
• 可旋转键数：
  8
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  6.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  1,3-丙二醇-二-间-甲苯磺酸盐 、 二异丙胺 生成 tetra-N-isopropyl-propanediyldiamine
  参考文献：
  名称：

  Preparation of N,N,N',N'-Tetrasubstituted Diamines

  摘要：

  DOI：

  10.1021/ja01151a521

文献信息

• Perfluoro-N,N,N',N'-tetrapropyldiaminopropane and use thereof in vapor phase heating
  申请人：MINNESOTA MINING AND MANUFACTURING COMPANY

  公开号：EP0424171A2

  公开（公告）日：1991-04-24

  N,N,N′,N′-tetrapropyldiaminopropane is fluorinated to produce a liquid predominantly perfluoro-N,N,N′,N′-tetrapropyldiaminopropane, having inert properties and a boiling point in the range of 212°C to 216°C. The inert liquid product is useful as a heat transfer liquid.

  将 N,N,N′,N′-四丙基二氨基丙烷进行氟化处理，生成一种主要为全氟-N,N,N′,N′-四丙基二氨基丙烷的液体，该液体具有惰性，沸点在 212°C 至 216°C 之间。这种惰性液体产品可用作传热液体。
• Ink composition and inkjet recording method
  申请人：Fujifilm Corporation

  公开号：EP2169018A2

  公开（公告）日：2010-03-31

  An ink composition is provided that includes (A) a pigment other than titanium oxide, (B) a cationically polymerizable compound, and (C) a photo-acid generator, the pigment (A) having a content of 3.5 to 20 wt %, the cationically polymerizable compound (B) containing only an oxirane compound and/or an oxetane compound, the oxirane compound and/or the oxetane compound containing a low-viscosity compound having a viscosity at 25°C of no greater than 12 mPa·s, and the low-viscosity compound having a total content of 65 to 100 wt % relative to the total weight of the cationically polymerizable compound (B). There is also provided an ink composition that includes (A') titanium oxide, (B) a cationically polymerizable compound, and (C) a photo-acid generator, the titanium oxide (A') having a content of 35 to 45 wt %, the cationically polymerizable compound (B) containing an oxirane compound, oxetane compound, or vinyl ether compound having a viscosity at 25°C of no greater than 12 mPa·s, and the oxirane compound, oxetane compound, and vinyl ether compound having a viscosity at 25°C of no greater than 12 mPa·s having a total content of 65 to 100 wt % relative to the total weight of the cationically polymerizable compound (B). There is also provided an inkjet recording method that includes (a1) a step of discharging the ink composition above onto a recording medium and (b1) a step of curing the ink composition by irradiating the discharged ink composition with actinic radiation.

  提供了一种油墨组合物，其中包括 (A) 除氧化钛以外的颜料，(B) 阳离子可聚合化合物，和 (C) 光酸发生器，颜料 (A) 的含量为 3.5至20重量％，阳离子可聚合化合物(B)仅含有环氧乙烷化合物和/或氧杂环丁烷化合物，环氧乙烷化合物和/或氧杂环丁烷化合物含有低粘度化合物，其在25°C时的粘度不大于12 mPa-s，相对于阳离子可聚合化合物(B)的总重量，低粘度化合物的总含量为65至100重量％。还提供了一种油墨组合物，其中包括 (A')氧化钛、(B) 可阳离子聚合的化合物和 (C) 光酸发生器，氧化钛 (A') 的含量为 35 至 45 wt %，可阳离子聚合的化合物 (B) 含有环氧乙烷化合物、氧杂环丁烷化合物或乙烯基醚化合物，其含量为 35 至 45 wt %、或乙烯基醚化合物，其在 25°C 时的粘度不大于 12 mPa-s，且环氧乙烷化合物、氧杂环丁烷化合物和乙烯基醚化合物在 25°C 时的粘度不大于 12 mPa-s，其总含量相对于阳离子可聚合化合物 (B) 的总重量为 65 至 100 wt %。还提供了一种喷墨记录方法，包括(a1)将上述墨水组合物排放到记录介质上的步骤和(b1)通过用阳极辐射照射排放的墨水组合物来固化墨水组合物的步骤。
• Composition for resist patterning and method for forming pattern using same
  申请人：AZ Electronic Materials (Luxembourg) S.a.r.l.

  公开号：US10191380B2

  公开（公告）日：2019-01-29

  [Problem] To provide a composition capable of improving surface roughness of resist patterns, and also to provide a pattern formation method employing the composition. [Solution] The present invention provides a composition containing a particular nitrogen-containing compound, an anionic surfactant having a sulfo group, and water; and also provides a pattern formation method containing a step of applying the composition to a resist pattern beforehand developed and dried.

  问题 提供一种能够改善抗蚀剂图案表面粗糙度的组合物，并提供一种使用该组合物的图案形成方法。 [解决方案］ 本发明提供了一种含有特定含氮化合物、具有磺基的阴离子表面活性剂和水的组合物；还提供了一种图案形成方法，其中包含将该组合物用于事先显影和干燥的光刻胶图案的步骤。
• Composition for coating resist pattern
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10558119B2

  公开（公告）日：2020-02-11

  The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.

  本发明提供了一种用于涂覆抗蚀剂图案并利用蚀刻率差异反转图案的组合物。一种用于涂覆抗蚀剂图案的组合物包括一种组分（A），它是至少一种选自由金属氧化物（a1）、多酸（a2）、多酸盐（a3）、可水解硅烷（a4）、可水解硅烷的水解产物（a5）和可水解硅烷的水解缩合物（a6）组成的组的化合物；和组分 (B)，它是一种水性溶剂，其中可水解硅烷 (a4) 是 (i) 含有氨基的有机基团的可水解硅烷，(ii) 含有离子官能团的有机基团的可水解硅烷，(iii) 含有羟基的有机基团的可水解硅烷，或 (iv) 含有可转换为羟基的官能团的有机基团的可水解硅烷。
• Method for producing resist pattern coating composition with use of solvent replacement method
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US11531269B2

  公开（公告）日：2022-12-20

  Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.

  在光刻工艺中用于图案抗蚀剂薄膜的涂层组合物的生产方法，用于溶剂显影以反转图案。该方法包括：通过在非醇类亲水溶剂中水解和冷凝可水解硅烷，获得水解缩合产物的步骤；溶剂置换步骤，其中用疏水性溶剂置换非醇类亲水溶剂以获得水解缩合产物。生产半导体器件的方法，包括：将抗蚀剂组合物涂在基片上并形成抗蚀剂薄膜的步骤；对形成的抗蚀剂薄膜进行曝光和显影的步骤；将通过上述生产方法获得的组合物涂在步骤中显影期间或之后获得的图案抗蚀剂薄膜上，在图案之间形成涂膜的步骤；通过蚀刻和反转图案去除图案抗蚀剂薄膜的步骤。使用 ArF 激光（波长 193 纳米）或 EUV（波长 13.5 纳米）进行曝光的生产方法。使用有机溶剂进行负显影的生产方法。