6-ethenyl-1-naphthol

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 6-ethenyl-1-naphthol
• 英文别名: 6-Ethenylnaphthalen-1-ol
• 化学式: C₁₂H₁₀O
• 分子量: 170.211
• InChiKey: SSVJEUPQWPCKOG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  13
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  6-ethenyl-1-naphthol 、 benzenediazonium tetrafluoroborate 在 维生素 C 作用下， 以 N,N-二甲基甲酰胺 为溶剂， 反应 20.0h， 以71%的产率得到1-(1-hydroxynaphthalen-6-yl)-2-phenylethanone
  参考文献：
  名称：

  Ascorbic Acid Promoted Oxidative Arylation of Vinyl Arenes to 2-Aryl Acetophenones without Irradiation at Room Temperature under Aerobic Conditions

  摘要：

  A convenient and general protocol for oxidative arylation of vinyl arenes by aryl radicals generated in situ from arene diazonium fluoroborates promoted by ascorbic acid in air at room temperature has been developed in the absence of any additive and visible light irradiation. A series of diversely substituted 2-aryl acetophenones have been obtained in good yields by this procedure.

  DOI：

  10.1021/acs.joc.5b00825

文献信息

• Negative resist composition and resist pattern forming process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10120279B2

  公开（公告）日：2018-11-06

  A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

  提供一种负性抗蚀组合物，包括（A）一种甜菜碱型的砜化合物和（B）一种聚合物。该抗蚀组合物在曝光步骤期间有效控制酸扩散，在图案形成期间具有非常高的分辨率，并形成具有最小LER的图案。
• Positive resist composition, resist pattern forming process, and photomask blank
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10416558B2

  公开（公告）日：2019-09-17

  A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

  一种正性抗蚀组合物包括一种聚合物，适应在酸的作用下分解以增加其在碱性显影剂中的溶解性，以及一种具有特定结构的砜化合物，具有高分辨率。当这种抗蚀组合物经过光刻处理时，可以形成具有最小LER的图案。
• SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160090355A1

  公开（公告）日：2016-03-31

  A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R 01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0≦k≦5+4m, R 101 , R 102 and R 103 are a monovalent hydrocarbon group, or at least two of R 101 , R 102 and R 103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

  提供一种化学式为（0-1）的磺鎓盐，其中W是烷基或芳基，R01是一价碳氢基团，m为0、1或2，k为整数：0≦k≦5+4m，R101、R102和R103是一价碳氢基团，或者R101、R102和R103中至少两个可以相互结合形成与硫原子的环，L是单键、酯、磺酸酯、碳酸酯或氨基甲酸酯键。包含磺鎓盐作为PAG的抗蚀组成物在经过电子束或极紫外光刻过程时表现出非常高的分辨率。可获得具有最小LER的图案。
• SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS
  申请人：DOMON Daisuke

  公开号：US20120308920A1

  公开（公告）日：2012-12-06

  There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition.

  公开了一种由以下一般式（1）所示的硫銨鹽。可以有一种硫銨鹽，能夠將一個能夠生成具有適當酸度並不損害與基材的粘附性的酸的酸生成單元引入到基聚合物中；使用所述硫銨鹽的聚合物；使用所述聚合物作為基聚合物的化學放大的抗蝕組成物；以及使用所述化學放大的抗蝕組成物的圖案形成過程。
• Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180180992A1

  公开（公告）日：2018-06-28

  A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

  一种正性光刻胶组合物，包括一种聚合物，该聚合物适于在酸的作用下分解，以增加其在碱性显影剂中的溶解度，以及一种化学式（A）的磺化物化合物，具有高分辨率。当使用光刻技术处理光刻胶组合物时，可以形成最小LER的图案。