COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
申请人:Adeka Corporation
公开号:EP3144293A1
公开(公告)日:2017-03-22
This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.
本发明提供了由下式(I)表示的铜化合物。在通式(I)中,R1 至 R3 独立地代表碳原子数为 1 至 5 的直链或支链烷基;如果 R1 和 R2 是甲基,R3 代表碳原子数为 2 至 5 的直链或支链烷基;如果 R1 是甲基,R2 是乙基,R3 代表甲基或碳原子数为 3 至 5 的直链或支链烷基。用于形成本发明薄膜的起始材料包括通式(I)所代表的铜化合物。本发明可提供一种熔点低、能以液态输送、蒸汽压高且易汽化的铜化合物,以及一种使用这种铜化合物形成薄膜的起始材料。