Photosensitive polymer and chemically amplified photoresist composition including the same
申请人:Kim Deog-Bae
公开号:US20050271977A1
公开(公告)日:2005-12-08
A photosensitive polymer for forming high-resolution fine circuit patterns with an exposure light source of a short wavelength, and a chemically amplified photoresist composition including the polymer, are disclosed. The photosensitive polymer is represented by the following Formula 1,
wherein R
1
is a hydrogen atom, R
2
is a hydrogen atom,
R
3
is a chlorine atom, a bromine atom, hydroxy, cyano, t-butoxy, CH
2
NH
2
, CONH
2
, CH═NH, CH(OH)NH
2
or C(OH)═NH group, R
4
is a hydrogen atom or methyl group, each of 1-x-y-z, x, y and z is a degree of polymerization of each repeating unit constituting the photosensitive polymer, x, y and z are 0.01 to 0.8, respectively, and n is 1 or 2.
本发明公开了一种光敏聚合物,用于利用短波长的曝光光源形成高分辨率的细电路图案,以及包括该聚合物的化学增感光阻剂组合物。该光敏聚合物由以下式子1表示,其中R1为氢原子,R2为氢原子,R3为氯原子、溴原子、羟基、氰基、叔丁氧基、CH2NH2、CONH2、CH═NH、CH(OH)NH2或C(OH)═NH基团,R4为氢原子或甲基基团,1-x-y-z、x、y和z分别为构成光敏聚合物的每个重复单元的聚合度,x、y和z分别为0.01至0.8,n为1或2。