[EN] ACIDIC BATH FOR ELECTROLYTICALLY DEPOSITING A COPPER DEPOSIT CONTAINING HALOGENATED OR PSEUDOHALOGENATED MONOMERIC PHENAZINIUM COMPOUNDS<br/>[FR] BAIN ACIDE DE DEPOT ELECTROLYTIQUE D'UNE COUCHE DE CUIVRE CONTENANT DES COMPOSES DE PHENAZINIUM HALOGENES OU PSEUDOHALOGENES MONOMERIQUES
申请人:ATOTECH DEUTSCHLAND GMBH
公开号:WO2005049584A1
公开(公告)日:2005-06-02
For manufacturing particularly uniform and mirror bright copper coatings that are leveled and ductile as well using a relatively high current density, halogenated or pseudohalogenated monomeric pheanzinium compounds or a purity at least 85 mole-% and having the general chemical formula (I) are utilized in which R1, R2, R3, R4. R5, R6, R7, R7’’, R8, R9, X and A¯have the significations denoted in the claims. The compounds are prepared by diazotizing a suited starting compound prior to halogenating or pseudohalogenating it in the presence of mineral acid, diazotization means and halide or pseudohalide, with the reaction steps being run in one single vessel.
为了制造特别均匀和镜面明亮的铜涂层,同时使用相对较高的电流密度,利用含有至少85摩尔%纯度并具有一般化学式(I)的卤代或假卤代单体苯并离子化合物,这些涂层具有平整和韧性,其中R1,R2,R3,R4,R5,R6,R7,R7’’,R8,R9,X和A¯具有所述权利要求所示的含义。在矿物酸,重氮化剂和卤化物或假卤化物的存在下,通过重氮化适当的起始化合物然后卤代或假卤代它来制备这些化合物,反应步骤在一个单一的容器中进行。