3-trifluoromethyl-4,5,6,7-tetrafluoro-1H-indazole | 945038-89-1

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并吡唑类
• 英文名称: 3-trifluoromethyl-4,5,6,7-tetrafluoro-1H-indazole
• 英文别名: 4,5,6,7-Tetrafluoro-3-(trifluoromethyl)-1H-indazole；4,5,6,7-tetrafluoro-3-(trifluoromethyl)-2H-indazole
• CAS: 945038-89-1
• 化学式: C₈HF₇N₂
• 分子量: 258.098
• InChiKey: NNMZRNJTHCMELD-UHFFFAOYSA-N

物化性质

• 沸点：
  274.2±35.0 °C(Predicted)
• 密度：
  1.774±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  17
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  28.7
• 氢给体数：
  1
• 氢受体数：
  8

反应信息

• 作为反应物：
  描述：

  3-trifluoromethyl-4,5,6,7-tetrafluoro-1H-indazole 以 正己烷 、 二氯甲烷 、 氯仿 、 水 、 乙腈 为溶剂， 生成 [hydrotris(3-trifluoromethyl-4,5,6,7-tetrafluoroindazolyl)borate]Cu(CO)
  参考文献：
  名称：

  一种新的全氟F 21 -Tp蝎状配体：（F 21 -Tp）M催化剂（M = Cu，Ag）通过碳烯插入而增强的烷烃官能度

  摘要：

  制备了新的三（吲唑基）硼酸酯配体[F 21 -Tp 4Bo，3CF3 ] T1（1）并对其结构进行了表征。盐与碘化铜或三氟甲磺酸银的反应得到配合物[F 21 -Tp 4Bo，3CF3 ] ML（M = Cu，L = NCMe，2 ; M = Ag，L = Me 2 CO，4），由还获得了羰基加合物[F 21 -Tp 4Bo，3CF3 ] M（CO）（M = Cu，3 ; M = Ag，5）。配合2 - 5通过光谱学和X射线研究已对它们进行了表征，从中可以设想存在电子不足的金属中心。配合物2和4已被用作催化剂，用于烷烃和环烷烃与重氮乙酸乙酯的反应。银络合物显示出出色的催化活性，可将卡宾插入烷烃CH键。以高产率（> 90％）和低催化剂负载量（0.5％）获得功能化产物。TON值已达到200，比已经报道的用于该转化的任何其他第11组金属基催化剂高10倍。

  DOI：

  10.1021/om800531a
• 作为产物：
  描述：

  溴五氟苯 在 正丁基锂 、 一水合肼 作用下， 以 乙醚 、 正己烷 、 甲苯 为溶剂， 反应 17.25h， 生成 3-trifluoromethyl-4,5,6,7-tetrafluoro-1H-indazole
  参考文献：
  名称：

  全氟1 H-吲唑和氢三（吲唑-1-基）硼酸盐。超分子组织和新的合成程序以形成蝎子状配体

  摘要：

  本文描述了全氟1 H-吲唑2–5和氢三（吲唑基）硼酸盐th配合物6–9的合成和完整表征，它们在3位上含有从2到6个碳原子不等的线性全氟烷基链。在固态下，全氟1 H-吲唑显示出取决于全氟烷基链长度的超分子结构。对于CF 2 CF 3衍生物2（手性空间群P 3 2），观察到3级的分类异构体，对于C 3 F 7和C 4 F，观察到2级的分类异构体分别为9个导数3（手性空间群P 2 1 2 1 2 1，单位晶格中的一种螺旋）和4（空间组P 2 1 / n，单位晶胞中的两种类型的螺旋），以及带有较长C 6 F 13链5（空间群P 2 1 / c）的吲唑可观察到二聚体。全氟化氢三（吲唑基）硼酸盐th配合物6–9 [TlFn–Tp 4Bo，3Rf通过基于HBBr 2（由BBr 3和Et 3 SiH原位生成）与2-5的吲哚酸酯反应，然后进行阳离子交换的新反应获得。[TlF 33 –Tp 4Bo，3C 3 F

  DOI：

  10.1039/c4nj00136b

文献信息

• The structure of fluorinated indazoles: the effect of the replacement of a H by a F atom on the supramolecular structure of NH-indazoles
  作者：Johannes Teichert、Pascal Oulié、Kane Jacob、Laure Vendier、Michel Etienne、Rosa M. Claramunt、Concepción López、Carlos Pérez Medina、Ibon Alkorta、José Elguero

  DOI：10.1039/b617988f

  日期：——

  The structures of three NH-indazoles (3-methyl, 3-trifluoromethyl and 3-trifluoromethyl-4,5,6,7-tetrafluoroindazoles) have been determined by X-ray crystallography. These three compounds, together with 3-methyl-4,5,6,7-tetrafluoroindazole, whose X-ray structure could not be determined, have been studied using multinuclear magnetic resonance spectroscopy, including solid-state CPMAS. They all are 1H-tautomers. In the crystal, 3-methyl-1H-indazole forms hydrogen bonded dimers, whereas 3-trifluoromethyl-1H-indazole and 3-trifluoromethyl-4,5,6,7-tetrafluoro-1H-indazole crystallize as catemers. These catemers are chiral space group P32. They are the first examples of indazoles crystallizing in the form of helices of three-fold screw axis. Attempts at rationalizing this behavior on the basis of supramolecular interactions (hydrogen bonds and aromatic interactions) and GIAO calculations are discussed.

  通过 X 射线晶体学，确定了三种 NH-吲唑（3-甲基、3-三氟甲基和 3-三氟甲基-4,5,6,7-四氟吲唑）的结构。这三种化合物，连同无法确定其 X 射线结构的 3-甲基-4,5,6,7-四氟吲唑，已通过多核磁共振光谱法（包括固态 CPMAS）进行了研究。它们都是 1H 同分异构体。在晶体中，3-甲基-1H-吲唑形成氢键二聚体，而 3-三氟甲基-1H-吲唑和 3-三氟甲基-4,5,6,7-四氟-1H-吲唑则结晶为同系物。这些对映体属于手性空间群 P32。它们是吲唑以三折螺旋轴螺旋形式结晶的首个实例。本文讨论了在超分子相互作用（氢键和芳香族相互作用）和 GIAO 计算的基础上合理解释这种行为的尝试。
• Active OLED display, method for preparing an active OLED display and compound
  申请人：Novaled GmbH

  公开号：US11201306B2

  公开（公告）日：2021-12-14

  The present invention relates to a display device comprising—a plurality of OLED pixels comprising at least two OLED pixels, the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers—is arranged between and in contact with the cathode and the anode, and—comprises a first electron transport layer, a first hole transport layer, and a first light emitting layer provided between the first hole transport layer and the first electron transport layer, and—a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, the first hole transport layer is provided in the stack of organic layers as a common hole transport layer shared by the plurality of OLED pixels, and the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal salts and from electrically neutral metal complexes comprising a metal cation and at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Mn, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (IV) or less, a method for preparing the display device and a chemical compound for use therein.

  本发明涉及一种显示装置，包括-多个 OLED 像素，该多个 OLED 像素包括至少两个 OLED 像素，该 OLED 像素包括阳极、阴极和有机层堆叠，其中有机层堆叠-布置在阴极和阳极之间并与阴极和阳极接触，并且-包括第一电子传输层、第一空穴传输层和设置在第一空穴传输层和第一电子传输层之间的第一发光层，以及-驱动电路，该驱动电路被配置为分别驱动多个 OLED 像素中的像素，其中、对于多个 OLED 像素，第一空穴传输层作为多个 OLED 像素共享的共用空穴传输层被设置在有机层堆叠中、第一空穴传输层包括：(i) 至少一种由共价结合原子组成的第一空穴传输基质化合物；(ii) 至少一种选自金属盐和电中性金属复合物的电 p-掺杂剂，电中性金属复合物包括金属阳离子和至少一种阴离子和/或至少一种由至少 4 个共价结合原子组成的阴离子配体，其中电 p-掺杂剂的金属阳离子选自碱金属碱土金属、Pb、Mn、Fe、Co、Ni、Zn、Cd；氧化态（II）或（III）的稀土金属；Al、Ga、In；以及氧化态（IV）或更低的Sn、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo和W。
• Electronic semiconducting device and method for preparing the electronic semiconducting device
  申请人：Novaled GmbH

  公开号：US11239440B2

  公开（公告）日：2022-02-01

  The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib) wherein A1, A2, A3 and A4 are independently selected from CO, SO2 or POR1; R1=electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated C1 to C20 alkyl, halogenated or perhalogenated C6 to C20 aryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms; B1, B2, B3 and B4 are same or independently selected from substituted or unsubstituted C1 to C20 alkyl, substituted or unsubstituted C1 to C20 heteroalkyl, substituted or unsubstituted C6 to C20 aryl, substituted or unsubstituted C5 to C20 heteroaryl, or B1 and B2 form a ring; and b) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate are excluded, and the first hole transport layer comprises a sublayer, wherein the electrical dopant is comprised in an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the sublayer, and a method for preparing the same.

  本发明涉及一种电子器件，在第一电极和第二电极之间包括至少一个第一空穴传输层，其中第一空穴传输层包括(i)至少一个由共价结合原子组成的第一空穴传输基质化合物和(ii)至少一个电p-掺杂剂，该电p-掺杂剂选自金属酸盐和电中性金属络合物，该金属络合物包括一个金属阳离子和至少一个阴离子和/或至少一个由至少4个共价结合原子组成的阴离子配体，其中电p-掺杂剂的金属阳离子选自碱金属、碱土金属、铅、锰、铁、钴、镍、锌、镉；氧化态(II)或(III)的稀土金属；Al、Ga、In；以及Sn、Ti、Zd；碱土金属、Pb、Me、Fe、Co、Ni、Zn、Cd；氧化态为 (II) 或 (III) 的稀土金属；Al、Ga、In；以及氧化态为 (TV) 或以下的 Sn、Ti、Zr、Hf、V、Nb、Ta、Cr、Mo 和 W；条件是 a) p 掺杂剂包含具有通式 (Ia) 或 (Ib) 的阴离子或阴离子配体，其中 A1、A2、A3 和 A4 独立选自 CO、SO2 或 POR1；R1=从卤化物、腈、卤代或过卤代的 C1 至 C20 烷基、卤代或过卤代的 C6 至 C20 芳基或卤代或过卤代的具有 5 至 20 个成环原子的杂芳基所组成的组中选出的取电子基团；B1、B2、B3 和 B4 相同或独立选自取代或未取代的 C1 至 C20 烷基、取代或未取代的 C1 至 C20 杂烷基、取代或未取代的 C6 至 C20 芳基、取代或未取代的 C5 至 C20 杂芳基，或 B1 和 B2 形成一个环；b) 不包括由锂阳离子和选自高氯酸盐和四氟硼酸盐的阴离子组成的 p 掺杂剂，且第一空穴传输层包括一个子层，其中电掺杂剂的含量（按重量和/或体积计）超过子层中可能另外包含的其他成分的总量，以及制备该掺杂剂的方法。
• Electronic device, method for preparing the same and display device comprising the same
  申请人：Novaled GmbH

  公开号：US11522150B2

  公开（公告）日：2022-12-06

  The present invention relates to an electronic device comprising at least one layer comprising a borate salt, wherein the borate salt is comprised in the layer comprising the borate salt In an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the layer, a display device comprising the same and a method for preparing the same.

  本发明涉及一种包含至少一层硼酸盐的电子器件，其中硼酸盐在包含硼酸盐的层中的含量（按重量和/或体积计算）超过了可能另外包含在层中的其他成分的总量；还涉及一种包含该电子器件的显示设备和制备该电子器件的方法。
• Electronic semiconducting device, method for preparing the electronic semiconducting device and compound
  申请人：Novaled GmbH

  公开号：US11539014B2

  公开（公告）日：2022-12-27

  The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

  本发明涉及一种电子器件，在第一电极和第二电极之间包含至少一个第一半导体层，该层包括(i)至少一种由共价结合原子组成的第一空穴传输基质化合物和(ii)至少一种选自金属硼酸盐络合物的电p掺杂剂，其中金属硼酸盐络合物由至少一种金属阳离子和至少一种由至少六个共价结合原子组成的阴离子配位体组成，该配位体包括至少一个硼原子，其中第一半导体层是空穴注入层、电荷产生层的空穴注入部分或空穴传输层，以及制备该层和相应金属硼酸盐化合物的方法。