作者:Jian-Yang Cho、Benoit Domercq、Simon C. Jones、Junsheng Yu、Xiaohong Zhang、Zesheng An、Maximilienne Bishop、Stephen Barlow、Seth R. Marder、Bernard Kippelen
DOI:10.1039/b701036b
日期:——
The charge-carrier mobilities for three Ni bis(dithiolene) complexes have been determined using the steady-state space-charge limited current technique. A high mobility of 2.8 cm2 V–1 s–1 was observed for one compound, which exhibits a π-stacked columnar structure, in an annealed unsymmetrical melt-processed device. Energy-level considerations and field-effect transistor measurements suggest that this value represents an electron mobility. However, saturation mobilities measured for this compound in spin-coated field-effect transistors were found to be over two orders of magnitude lower than the space-charge limited current values. X-Ray diffraction shows a difference in morphology between thick melt-processed and thin spin-coated films and, therefore, a significant change in intermolecular packing between the device types may explain the discrepancy in mobilities obtained using the two techniques.
使用稳态空间电荷限制电流技术测定了三种 Ni 双(二硫醇)配合物的载流子迁移率。在退火的不对称熔融加工器件中,一种具有 π 堆积柱状结构的化合物观察到了 2.8 cm2 V–1 s–1 的高迁移率。能级考虑和场效应晶体管测量表明该值代表电子迁移率。然而,在旋涂场效应晶体管中测量的该化合物的饱和迁移率被发现比空间电荷限制电流值低两个数量级以上。 X 射线衍射显示厚的熔融加工薄膜和薄的旋涂薄膜之间的形态差异,因此,器件类型之间分子间堆积的显着变化可以解释使用两种技术获得的迁移率的差异。