2-异戊基萘 | 613-61-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 中文名称: 2-异戊基萘
• 英文名称: 2-Isopentyl-naphthalin
• 英文别名: ss-Isoamylnaphthalin；2-(3-methylbutyl)naphthalene
• CAS: 613-61-6
• 化学式: C₁₅H₁₈
• 分子量: 198.308
• InChiKey: LLIBTMYIYOWJKC-UHFFFAOYSA-N

物化性质

• 沸点：
  295-296 °C(Press: 725 Torr)
• 密度：
  0.9724 g/cm3

计算性质

• 辛醇/水分配系数(LogP)：
  5.7
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  2-异戊基萘 在 chromium(VI) oxide 作用下， 生成 2-isopentyl-[1,4]naphthoquinone
  参考文献：
  名称：

  Fieser et al., Journal of the American Chemical Society, 1948, vol. 70, p. 3177

  摘要：

  DOI：
• 作为产物：
  描述：

  alkaline earth salt of/the/ methylsulfuric acid 在 sulfur 作用下， 生成 2-异戊基萘
  参考文献：
  名称：

  Tatarenko; Zukerwanik, Zhurnal Obshchei Khimii, 1948, vol. 18, p. 106,109

  摘要：

  DOI：

文献信息

• Visible-Light-Promoted Nickel-Catalyzed Cross-Coupling of Alkyltitanium Alkoxides with Aryl and Alkenyl Halides
  作者：Andrei A. Leushukou、Anastasiya V. Krech、Alaksiej L. Hurski

  DOI：10.1021/acs.orglett.2c02428

  日期：2022.9.2

  alkyltitanium alkoxides generated in situ from Grignard reagents and Ti(OiPr)4 undergo a photocatalyst-free nickel-catalyzed cross-coupling with organic halides upon irradiation with blue light. Mechanistic studies suggested that the reaction proceeds through radical intermediates formed by photochemical decomposition of the alkyltitanium reagents. Various aryl, heteroaryl, and vinyl halides were efficiently

  在这里，我们报告了由格氏试剂和 Ti(O i Pr) 4原位生成的烷基钛醇盐在蓝光照射下与有机卤化物发生无光催化剂镍催化的交叉偶联。机理研究表明，反应通过烷基钛试剂的光化学分解形成的自由基中间体进行。各种芳基、杂芳基和乙烯基卤化物在报告的条件下被有效地烷基化，包括那些含有酯和酰胺基团的。
• Fieser et al., Journal of the American Chemical Society, 1948, vol. 70, p. 3212
  作者：Fieser et al.

  DOI：——

  日期：——
• Characterization of cross-hatch morphology of MBE (211) HgCdTe
  作者：M. Martinka、L. A. Almeida、J. D. Benson、J. H. Dinan

  DOI：10.1007/bf02665847

  日期：2001.6

  We present the results of a detailed study of the nature and origin of cross-hatch patterns commonly observed on (211) HgCdTe epilayers deposited by molecular beam epitaxy. Cross-hatch patterns were examined using x-ray topography as well as Nomarski, interferometric, and atomic force microscopies. Cross-hatch patterns were generally comprised of three sets of lines, parallel to the [(2) over bar 31], [(2) over bar 13], and [01 (1) over bar] directions. The lines parallel to the [01 (1) over bar] direction exhibited distinct properties compared to the two sets of lines parallel to [(2) over bar3], and [(2) over bar 13]. Under growth conditions characterized by excessive Hg flux (low temperature), lines parallel to [01 (1) over bar] were periodic and tended to dominate the cross-hatch pattern. In some cases, bands of dislocations, 10-100 mum in width, formed parallel to [01 (1) over bar]. Under optimized growth conditions, on very closely lattice-matched substrates, (dislocation densities <10(5) cm(-2)) lines parallel to [01<(1)over bar>] vanished entirely, and lines parallel to [(2) over bar 31] and [(2) over bar 13] became sparse. The remaining lines were typically fragments terminated by either a single dislocation, a cluster of dislocations (micro-void), or the wafer's edge. The density of these line fragments tended to decrease as the dislocation density decreased. Under the best growth conditions on very closely lattice-matched substrates we have achieved dislocation densities of 5 x 10(4) cm(-2), which is comparable to the dislocation density of the CdZnTe substrate.
• Oddo; Barabini, Gazzetta Chimica Italiana, 1890, vol. 20, p. 719
  作者：Oddo、Barabini

  DOI：——

  日期：——
• Fieser et al., Journal of the American Chemical Society, 1948, vol. 70, p. 3177
  作者：Fieser et al.

  DOI：——

  日期：——