Fragmentation, Rearrangement, and Elimination in Heptamethylpropane Derivatives<sup>1,2</sup>
作者:V. J. Shiner、Günter F. Meier
DOI:10.1021/jo01339a029
日期:1966.1
RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON
申请人:Mitsubishi Rayon Co., Ltd.
公开号:US20130252181A1
公开(公告)日:2013-09-26
A resist polymer (Y′), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by the following formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y′):
[Chemical formula 1]
in the formula (1), L is a divalent linear, branched, or cyclic C
1-20
hydrocarbon group which may have a substituent and/or a heteroatom; R
11
is a g-valent linear, branched, or cyclic C
1-20
hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.