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2,2-diphenyl-acenaphthen-1-one | 85925-12-8

中文名称
——
中文别名
——
英文名称
2,2-diphenyl-acenaphthen-1-one
英文别名
2,2-Diphenyl-acenaphthen-1-on;2-Oxo-1.1-diphenyl-acenaphthen;2,2-diphenyl-1(2H)-acenaphthylenone;1.1-Diphenyl-acenaphthenon-(2);1(2H)-Acenaphthylenone, 2,2-diphenyl-;2,2-diphenylacenaphthylen-1-one
2,2-diphenyl-acenaphthen-1-one化学式
CAS
85925-12-8
化学式
C24H16O
mdl
——
分子量
320.39
InChiKey
LOAIIYHYHVVAME-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.8
  • 重原子数:
    25
  • 可旋转键数:
    2
  • 环数:
    5.0
  • sp3杂化的碳原子比例:
    0.04
  • 拓扑面积:
    17.1
  • 氢给体数:
    0
  • 氢受体数:
    1

SDS

SDS:e67148568a9e96eddd3fc20dbf485e70
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上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

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文献信息

  • MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US20180101096A1
    公开(公告)日:2018-04-12
    A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used. (in formula (0), each X independently represents an oxygen atom or a sulfur atom, or a non-crosslinked state, R 1 represents a 2 n -valent group having 1 to 30 carbon atoms, or a single bond, each R 0 independently represents a straight, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, a straight, branched or cyclic alkenyl group having 2 to 30 carbon atoms, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group or a hydroxyl group, the alkyl group, the alkenyl group and the aryl group each optionally include a cyanato group, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxyl group, an ether bond, a ketone bond or an ester bond, each m 1 is independently an integer of 0 to 4, in which at least one m 1 is an integer of 1 to 4, each m 2 is independently an integer of 0 to 3, n is an integer of 1 to 4, and each p is independently 0 or 1.)
    一种用于光刻的底层膜的材料,其中使用以下式(0)代表的化合物。(在式(0)中,每个X独立表示氧原子或硫原子,或非交联状态,R1表示具有1到30个碳原子的2n价基团,或者单键,每个R0独立表示具有1到30个碳原子的直链、支链或环烷基,具有6到30个碳原子的芳基,具有2到30个碳原子的直链、支链或环烯基,硫醇基,卤素基,硝基,氨基,羧基或羟基,烷基、烯基和芳基中每个可选包括氰酸基、硫醇基、卤素基、硝基、氨基、羧基、羟基、醚键、酮键或酯键,每个m1独立地为0到4的整数,其中至少一个m1为1到4的整数,每个m2独立地为0到3的整数,n为1到4的整数,每个p独立地为0或1。)
  • Diamond and Amorphous Carbon MEMS
    作者:J.P. Sullivan、T.A. Friedmann、K. Hjort
    DOI:10.1557/mrs2001.68
    日期:2001.4

    The designer of microelectromechanical systems (MEMS) can increase MEMS performance either by improved mechanical design or by the selection of a MEMS material with improved mechanical performance. In the quest to identify highperformance MEMS materials, diamond and amorphous carbon have recently emerged as a promising class of materials.

    微机电系统(MEMS)的设计者可以通过改进机械设计或选择具有改进机械性能的MEMS材料来提高MEMS性能。在寻找高性能MEMS材料的过程中,钻石和非晶碳最近被认为是一类有前途的材料。
  • Lithium Aluminum Hydride Reactions in Pyridine Solution. Reductive Cleavage of Ketones<sup>1</sup>
    作者:Peter T. Lansbury
    DOI:10.1021/ja01463a042
    日期:1961.1
    logarithm. Oxidation of cis-Decalih-Commercial cis-decalin was purified by vapor phase chromatography. The hydrocarbon (6 8.) was added to a solution of.50 g. of sodium dichromate, 40 ml. of water and 141 g. of 72% perchloric acid in enough acetic acid to make 1 1. of solution. The oxidation was carried out at 8' for 30 min. The reaction mixture was worked up as described above for the oxidation of 3-methylheptane
    含有 5.1 克。通过气相色谱法分离 3-乙基戊烷。通过与高锰酸钾溶液一起振摇然后进行气相色谱法($6~1.3929)来纯化上述材料。通过将其溶解在10ml中进行最终纯化。醋酸,加入重铬酸钠和高氯酸的 90% 醋酸溶液,直到橙色持续存在。加入水,将烃溶于乙醚,用碳酸氢钠溶液洗涤并通过气相色谱分离。在 20 v. 的电离电位下测定的质谱表明存在至少 97% 的一种氘(基于母峰)。动力学方法。-将等体积的碳氢化合物在冰醋酸中的溶液(通过减压蒸馏从三氧化铬中纯化)和重铬酸钠 (2 XM ) 和高氯酸 (1.333 M) 在 90yc 乙酸中的溶液放置在已密封到 10 毫米的 Utube。贝克曼细胞。溶液在减压下脱气并达到25.0'。将溶液混合并通过倒置管转移到贝克曼池中。铬 (VI) 的消失速率随着 390 mp 吸光度的变化而变化。对数 (AA m ) 与时间的关系图给出了良好的线性关系。速率
  • Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US10359701B2
    公开(公告)日:2019-07-23
    A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used. (in formula (0), each X independently represents an oxygen atom or a sulfur atom, or a non-crosslinked state, R1 represents a 2n-valent group having 1 to 30 carbon atoms, or a single bond, each R0 independently represents a straight, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, a straight, branched or cyclic alkenyl group having 2 to 30 carbon atoms, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group or a hydroxyl group, the alkyl group, the alkenyl group and the aryl group each optionally include a cyanato group, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxyl group, an ether bond, a ketone bond or an ester bond, each m1 is independently an integer of 0 to 4, in which at least one m1 is an integer of 1 to 4, each m2 is independently an integer of 0 to 3, n is an integer of 1 to 4, and each p is independently 0 or 1.)
    一种用于形成光刻用底层薄膜的材料,其中使用了下式 (0) 所代表的化合物。 式(0)中,每个 X 独立地代表氧原子或硫原子,或非交联状态,R1 代表具有 1 至 30 个碳原子的 2n 价基团,或单键,每个 R0 独立地代表具有 1 至 30 个碳原子的直链、支链或环状烷基,具有 6 至 30 个碳原子的芳基,具有 2 至 30 个碳原子的直链、支链或环状烯基,硫醇基,卤素基,硝基,氨基、烷基、烯基和芳基各自可选地包括一个氰基、一个硫醇基、一个卤素基、一个硝基、一个氨基、一个羧酸基、一个羟基、一个醚键、一个酮键、一个羧酸基、一个羟基、一个烷基、一个烯基和一个芳基、醚键、酮键或酯键,每个 m1 独立地为 0 至 4 的整数,其中至少一个 m1 为 1 至 4 的整数,每个 m2 独立地为 0 至 3 的整数,n 为 1 至 4 的整数,每个 p 独立地为 0 或 1。)
  • Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
    申请人:Mitsubishi Gas Chemical Company, Inc.
    公开号:US10745372B2
    公开(公告)日:2020-08-18
    A compound represented by the following formula (1): wherein each X independently represents an oxygen atom or a sulfur atom, or non-crosslinking, R1 represents a single bond or a 2n-valent group having 1 to 30 carbon atoms, the group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aryl group having 6 to 30 carbon atoms, each R2 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, an aryloxy group having 6 to 30 carbon atoms, or a hydroxyl group, in which at least one R2 represents an alkoxy group having 1 to 30 carbon atoms or an aryloxy group having 6 to 30 carbon atoms, each m is independently an integer of 1 to 6, each p is independently 0 or 1, and n is an integer of 1 to 4.
    下式(1)所代表的化合物: 其中每个 X 独立地代表氧原子或硫原子或非交联,R1 代表单键或具有 1 至 30 个碳原子的 2n 价基团,该基团可以具有脂环烃基团、双键、杂原子或具有 6 至 30 个碳原子的芳基,每个 R2 独立地代表具有 1 至 10 个碳原子的直链、支链或环状烷基、具有 6 至 10 个碳原子的芳基、具有 2 至 10 个碳原子的烯基、具有 1 至 30 个碳原子的烷氧基、具有 6 至 30 个碳原子的芳氧基或羟基,其中至少一个 R2 代表具有 1 至 30 个碳原子的烷氧基或具有 6 至 30 个碳原子的芳氧基,每个 m 独立地为 1 至 6 的整数,每个 p 独立地为 0 或 1,n 为 1 至 4 的整数。
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表征谱图

  • 氢谱
    1HNMR
  • 质谱
    MS
  • 碳谱
    13CNMR
  • 红外
    IR
  • 拉曼
    Raman
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mass
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ir
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  • 峰位数据
  • 峰位匹配
  • 表征信息
Shift(ppm)
Intensity
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Assign
Shift(ppm)
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测试频率
样品用量
溶剂
溶剂用量
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