(4-Butoxynaphthalen-1-yl)-naphthalen-1-yldiazene | 1402160-59-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: (4-Butoxynaphthalen-1-yl)-naphthalen-1-yldiazene
• 英文别名: (4-butoxynaphthalen-1-yl)-naphthalen-1-yldiazene
• CAS: 1402160-59-1
• 化学式: C₂₄H₂₂N₂O
• 分子量: 354.451
• InChiKey: VLHIKYCMCLUMHK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.4
• 重原子数：
  27
• 可旋转键数：
  6
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.17
• 拓扑面积：
  34
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  1-萘胺 在 盐酸 、 potassium carbonate 作用下， 以 水 、 N,N-二甲基甲酰胺 为溶剂， 反应 11.5h， 生成 (4-Butoxynaphthalen-1-yl)-naphthalen-1-yldiazene
  参考文献：
  名称：

  Devices performance tuned by molecular film-forming properties and electron trap for WORM memory application

  摘要：

  Small molecules with different film-forming properties and electron traps were synthesized and characterized in the meantime. An electrical memory device with the indium-tin-oxide (ITO)/Small-Molecule/Al sandwich structure was fabricated and its electrical performance was investigated. WORM storage devices with different threshold voltages were obtained, some of which present "ternary" property. The relationship between turn-on voltage and the energy barrier between active materials and electrodes was revealed by the cyclic voltammetry measurement. The molecular film-forming properties and electron traps are responsible for device performances collectively, which could be elucidated unambiguously from UV-vis absorption spectra and X-ray diffraction patterns. (C) 2012 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.dyepig.2012.04.021

文献信息

• Devices performance tuned by molecular film-forming properties and electron trap for WORM memory application
  作者：Wei Chen、Hua Li、Najun Li、Qingfeng Xu、Jian-Mei Lu、Lihua Wang

  DOI：10.1016/j.dyepig.2012.04.021

  日期：2012.11

  Small molecules with different film-forming properties and electron traps were synthesized and characterized in the meantime. An electrical memory device with the indium-tin-oxide (ITO)/Small-Molecule/Al sandwich structure was fabricated and its electrical performance was investigated. WORM storage devices with different threshold voltages were obtained, some of which present "ternary" property. The relationship between turn-on voltage and the energy barrier between active materials and electrodes was revealed by the cyclic voltammetry measurement. The molecular film-forming properties and electron traps are responsible for device performances collectively, which could be elucidated unambiguously from UV-vis absorption spectra and X-ray diffraction patterns. (C) 2012 Elsevier Ltd. All rights reserved.