[dibutyl-[butyl(methyl)carbamothioyl]sulfanylstannyl] N-butyl-N-methylcarbamodithioate | 401592-91-4

• 分子结构分类: 有机化合物 - 有机氮化合物
• 英文名称: [dibutyl-[butyl(methyl)carbamothioyl]sulfanylstannyl] N-butyl-N-methylcarbamodithioate
• CAS: 401592-91-4
• 化学式: C₂₀H₄₂N₂S₄Sn
• 分子量: 557.541
• InChiKey: JHKWDHZCUHMGNS-UHFFFAOYSA-L

物化性质

• 沸点：
  521.2±33.0 °C(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  6.23
• 重原子数：
  27.0
• 可旋转键数：
  14.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.9
• 拓扑面积：
  6.48
• 氢给体数：
  0.0
• 氢受体数：
  4.0

反应信息

• 作为产物：
  描述：

  二丁基二氯化锡 、 lithium;N-butyl-N-methylcarbamodithioate 以 二氯甲烷 为溶剂， 以66%的产率得到[dibutyl-[butyl(methyl)carbamothioyl]sulfanylstannyl] N-butyl-N-methylcarbamodithioate
  参考文献：
  名称：

  Organotin unsymmetric dithiocarbamates: synthesis, formation and characterisation of tin(II) sulfide films by atmospheric pressure chemical vapour deposition

  摘要：

  A series of tin unsymmetric dithiocarbamate complexes have been made from metathesis reaction of [CH3(C4H9)NSC2]Li and RnSnCl4-n; [RnSn(S2CN(C4H9)CH3)(4-n)] [n = 3, R = Me (1), Bu (2), Ph (3); n = 2, R = Me (4), Bu (5), Ph (6); n = 1, R = Me (7), Bu (8), Ph (9)]. The complexes were characterised by microanalysis, C-13, H-1 and Sn-119 NMR, Mossbauer and, in the case of 3, by X-ray diffraction, which revealed one short Sn-S [2.4631(9) Angstrom] and one long Sn-S interaction [3.084(l) Angstrom] indicative of a weakly chelating dithiocarbamate ligand. Atmospheric pressure chemical vapour deposition using I and 8 with H2S at 350-550 degreesC produced SnS and Sn2S3 films on glass substrates. The tin sulfides were analysed by Raman, EDAX, SEM and band gap measurements. Growth rates were of the order of 150 nm min(-1). (C) 2001 Published by Elsevier Science Ltd.

  DOI：

  10.1016/s0277-5387(01)00908-1

文献信息

• Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)
  作者：Karthik Ramasamy、Vladimir L. Kuznetsov、Kandasamy Gopal、Mohammad A. Malik、James Raftery、Peter P. Edwards、Paul O’Brien

  DOI：10.1021/cm301660n

  日期：2013.2.12

  between 195 °C and 325 °C. Complexes 1–4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 °C to 530 °C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV–vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy

  一系列的二硫代氨基甲酸盐[Sn（C 4 H 9）2（S 2 CN（RR'）2）2 ]（R，R'=乙基（1）； R =甲基，R'=丁基（2） ； R，R'=丁基（3）； R =甲基，R'=己基（4）；以及[Sn（C 6 H 5）2（S 2 CN（RR'）2）2 ]（R，R' ＝乙基（5）； R ＝甲基，R′＝丁基（6）； R，R′＝丁基（7）； R ＝甲基，R′＝己基（8））合成。的单晶X射线结构2，3，和8进行了测定。热重量分析（TGA）显示出对络合物单步分解1，3，及5 - 8，和双分解步的复合物2和4和325之间195℃℃。复杂1 – 4在400°C至530°C的温度下，它们用作通过气溶胶辅助化学气相沉积（AACVD）沉积SnS薄膜的单源前驱体。在所有沉积温度下，从所有四个络合物沉积正交晶SnS薄膜。膜的特征在于紫外可见光谱，粉末X射线衍射（p-XRD），拉曼光谱，扫描电子显微镜（SE